The kinetics of the low-pressure chemical vapor deposition of polycrystalline silicon from silane

W.L.M. Weerts, M.H.J.M. Croon, de, G.B.M.M. Marin

Research output: Contribution to journalArticleAcademicpeer-review

29 Citations (Scopus)
196 Downloads (Pure)

Abstract

The kinetics of the deposition of polycrystalline silicon from silane were studied at 25–125 Pa and 863–963 K using a continuous flow perfectly mixed reactor equipped with a microbalance and a quadrupole mass spectrometer for in situ deposition rate measurements and on-line gas-phase analysis. It was possible to obtain rate coefficients that are intrinsic, i.e., only determined by chemical phenomena. A four-step elementary gas-phase reaction network coupled to a ten-step elementary surface network was able to describe the experimental data. Pressure falloff behavior of gas-phase reactions was taken into account using the Rice-Rarnsberger-Kassel-Marcus theory. In the surface reaction mechanism, adsorption of silane, hydrogen, and highly reactive gas-phase intermediates and first-order desorption of hydrogen are the only kinetically significant steps. Silylene and disilane are the most abundant gas-phase intermediates, causing typically one fifth of the overall silicon growth.
Original languageEnglish
Pages (from-to)1318-1330
JournalJournal of the Electrochemical Society
Volume145
Issue number4
DOIs
Publication statusPublished - 1998

Fingerprint Dive into the research topics of 'The kinetics of the low-pressure chemical vapor deposition of polycrystalline silicon from silane'. Together they form a unique fingerprint.

Cite this