The influence of the chlorine-hydrogen ratio in the gas phase on the stability of the {113} faces of silicon in Si-H-Cl CVD

J.G.E. Gardeniers, M.M.W. Mooren, M.H.J.M. Croon, de, L.J. Giling

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Abstract

The orientation dependence of Si crystal growth in the Si-H-Cl CVD system was studied as a function of the Cl-H ratio of the gas phase. This was done by the use of hemispherical single crystal substrates. As was reported before, the stability of faces with the indexes {hhk}h
Original languageEnglish
Pages (from-to)233-244
JournalJournal of Crystal Growth
Volume102
Issue number1-2
DOIs
Publication statusPublished - 1990

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