The influence of the chlorine-hydrogen ratio in the gas phase on the stability of the {113} faces of silicon in Si-H-Cl CVD

J.G.E. Gardeniers; M.M.W. Mooren; M.H.J.M. Croon, de; L.J. Giling

doi:10.1016/0022-0248(90)90906-2

The influence of the chlorine-hydrogen ratio in the gas phase on the stability of the {113} faces of silicon in Si-H-Cl CVD

J.G.E. Gardeniers, M.M.W. Mooren, M.H.J.M. Croon, de, L.J. Giling

Chemical Reactor Engineering

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Abstract

The orientation dependence of Si crystal growth in the Si-H-Cl CVD system was studied as a function of the Cl-H ratio of the gas phase. This was done by the use of hemispherical single crystal substrates. As was reported before, the stability of faces with the indexes {hhk}h

Original language	English
Pages (from-to)	233-244
Journal	Journal of Crystal Growth
Volume	102
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(90)90906-2
Publication status	Published - 1990

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title = "The influence of the chlorine-hydrogen ratio in the gas phase on the stability of the {113} faces of silicon in Si-H-Cl CVD",

abstract = "The orientation dependence of Si crystal growth in the Si-H-Cl CVD system was studied as a function of the Cl-H ratio of the gas phase. This was done by the use of hemispherical single crystal substrates. As was reported before, the stability of faces with the indexes {hhk}h",

author = "J.G.E. Gardeniers and M.M.W. Mooren and {Croon, de}, M.H.J.M. and L.J. Giling",

year = "1990",

doi = "10.1016/0022-0248(90)90906-2",

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T1 - The influence of the chlorine-hydrogen ratio in the gas phase on the stability of the {113} faces of silicon in Si-H-Cl CVD

AU - Gardeniers, J.G.E.

AU - Mooren, M.M.W.

AU - Croon, de, M.H.J.M.

AU - Giling, L.J.

PY - 1990

Y1 - 1990

N2 - The orientation dependence of Si crystal growth in the Si-H-Cl CVD system was studied as a function of the Cl-H ratio of the gas phase. This was done by the use of hemispherical single crystal substrates. As was reported before, the stability of faces with the indexes {hhk}h

AB - The orientation dependence of Si crystal growth in the Si-H-Cl CVD system was studied as a function of the Cl-H ratio of the gas phase. This was done by the use of hemispherical single crystal substrates. As was reported before, the stability of faces with the indexes {hhk}h

U2 - 10.1016/0022-0248(90)90906-2

DO - 10.1016/0022-0248(90)90906-2

M3 - Article

SN - 0022-0248

VL - 102

SP - 233

EP - 244

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

The influence of the chlorine-hydrogen ratio in the gas phase on the stability of the {113} faces of silicon in Si-H-Cl CVD

Abstract

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