We have studied the transport properties of the 2DEG in annealed Si-d-doped GaAs structures. The diffusion rate of the Si atoms was obtained from the temperature dependence of the subband population. In sampleswith a large self-compensation we find that the electron density increases after annealing at temperatures below 800 °C. After annealing at temperatures above 800 °C we find a reduction of the electron concentration of the 2 Dimensional Electron Gas (2DEG). Our results showed that after annealing the quantum mobility in the lowest subband increases a little but that the quantum mobility in the higher subbands decreases strongly.
|Number of pages||6|
|Journal||Materials Science Forum|
|Publication status||Published - 1994|