The influence of silicon diffusion on the transport properties of the 2DEG in Si δ-doped GaAs

P.M. Koenraad, I. Bársony, A.F.W. Stadt, van de, J.A.A.J. Perenboom, J.H. Wolter

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Abstract

We have studied the transport properties of the 2DEG in annealed Si-d-doped GaAs structures. The diffusion rate of the Si atoms was obtained from the temperature dependence of the subband population. In sampleswith a large self-compensation we find that the electron density increases after annealing at temperatures below 800 °C. After annealing at temperatures above 800 °C we find a reduction of the electron concentration of the 2 Dimensional Electron Gas (2DEG). Our results showed that after annealing the quantum mobility in the lowest subband increases a little but that the quantum mobility in the higher subbands decreases strongly.
Original languageEnglish
Pages (from-to)663-668
Number of pages6
JournalMaterials Science Forum
Volume143-147
Issue number1
DOIs
Publication statusPublished - 1994

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