The influence of in situ argon cleaning of GaAs on Schottky diodes and metal-semiconductor field-effect transistors

J.G. Hassel, van; H.C. Heyker; J.J.M. Kwaspen

doi:10.1116/1.588057

The influence of in situ argon cleaning of GaAs on Schottky diodes and metal-semiconductor field-effect transistors

J.G. Hassel, van, H.C. Heyker, J.J.M. Kwaspen

Photonic Integration

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Abstract

The influence of in situ argon cleaning of GaAs on the electrical characteristics of Schottky diodes and metal–semiconductor field-effect transistors (MESFETs) is investigated. The beam energy was varied from 50 to 500 eV and the characteristics were compared to wet chemically cleaned devices. The characteristics of the Schottky diodes showed a significant degradation as a consequence of damage introduced by argon cleaning. Recovery was obtained with an additional annealing step at 300¿°C for diodes cleaned at energies below 125 eV. For higher energies, the samples became worse with annealing. MESFETs showed degraded performances for positive gate voltages due to a high gate leakage current. Improvement was also obtained upon annealing.

Original language	English
Pages (from-to)	2245-2249
Number of pages	5
Journal	Journal of Vacuum Science and Technology B
Volume	13
DOIs	https://doi.org/10.1116/1.588057
Publication status	Published - 1995

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@article{8bd050e014844f42a7a1c09711290acf,

title = "The influence of in situ argon cleaning of GaAs on Schottky diodes and metal-semiconductor field-effect transistors",

abstract = "The influence of in situ argon cleaning of GaAs on the electrical characteristics of Schottky diodes and metal–semiconductor field-effect transistors (MESFETs) is investigated. The beam energy was varied from 50 to 500 eV and the characteristics were compared to wet chemically cleaned devices. The characteristics of the Schottky diodes showed a significant degradation as a consequence of damage introduced by argon cleaning. Recovery was obtained with an additional annealing step at 300¿°C for diodes cleaned at energies below 125 eV. For higher energies, the samples became worse with annealing. MESFETs showed degraded performances for positive gate voltages due to a high gate leakage current. Improvement was also obtained upon annealing.",

author = "{Hassel, van}, J.G. and H.C. Heyker and J.J.M. Kwaspen",

year = "1995",

doi = "10.1116/1.588057",

language = "English",

volume = "13",

pages = "2245--2249",

journal = "Journal of Vacuum Science and Technology B",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

}

TY - JOUR

T1 - The influence of in situ argon cleaning of GaAs on Schottky diodes and metal-semiconductor field-effect transistors

AU - Hassel, van, J.G.

AU - Heyker, H.C.

AU - Kwaspen, J.J.M.

PY - 1995

Y1 - 1995

N2 - The influence of in situ argon cleaning of GaAs on the electrical characteristics of Schottky diodes and metal–semiconductor field-effect transistors (MESFETs) is investigated. The beam energy was varied from 50 to 500 eV and the characteristics were compared to wet chemically cleaned devices. The characteristics of the Schottky diodes showed a significant degradation as a consequence of damage introduced by argon cleaning. Recovery was obtained with an additional annealing step at 300¿°C for diodes cleaned at energies below 125 eV. For higher energies, the samples became worse with annealing. MESFETs showed degraded performances for positive gate voltages due to a high gate leakage current. Improvement was also obtained upon annealing.

AB - The influence of in situ argon cleaning of GaAs on the electrical characteristics of Schottky diodes and metal–semiconductor field-effect transistors (MESFETs) is investigated. The beam energy was varied from 50 to 500 eV and the characteristics were compared to wet chemically cleaned devices. The characteristics of the Schottky diodes showed a significant degradation as a consequence of damage introduced by argon cleaning. Recovery was obtained with an additional annealing step at 300¿°C for diodes cleaned at energies below 125 eV. For higher energies, the samples became worse with annealing. MESFETs showed degraded performances for positive gate voltages due to a high gate leakage current. Improvement was also obtained upon annealing.

U2 - 10.1116/1.588057

DO - 10.1116/1.588057

M3 - Article

SN - 1071-1023

VL - 13

SP - 2245

EP - 2249

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

ER -

The influence of in situ argon cleaning of GaAs on Schottky diodes and metal-semiconductor field-effect transistors

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