Abstract
We find experimentally that the relaxation oscillation (RO) peak in the relative intensity noise (RIN) of a semiconductor laser broadens by adding noise to the pump current. In our experiments we use a vertical-cavity surface-emitting laser. The broadening of the RIN peak with increasing carrier noise level is interpreted to be due to an increase of the non-linear gain saturation.
Original language | English |
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Title of host publication | Proceedings 2004 ninth annual symposium of the IEEE/LEOS Benelux Chapter : December 2-3, 2004, Ghent, Belgium |
Place of Publication | Gent |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 49-52 |
ISBN (Print) | 90-76546-06-1 |
Publication status | Published - 2004 |
Event | 9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium - Ghent, Belgium Duration: 2 Dec 2004 → 3 Dec 2004 |
Conference
Conference | 9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium |
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Country/Territory | Belgium |
City | Ghent |
Period | 2/12/04 → 3/12/04 |