The influence of a Si-doped layer in an AlGaAs/GaAs heterostructure on the damage introduced by CH4/H2/Ar ECR plasma etching

J.G. Hassel, van; J.H. Maahury; L.M.F. Kaufmann; C.M. Es, van; P.A.M. Nouwens

The influence of a Si-doped layer in an AlGaAs/GaAs heterostructure on the damage introduced by CH4/H2/Ar ECR plasma etching

J.G. Hassel, van
, J.H. Maahury
, L.M.F. Kaufmann
, C.M. Es, van
, P.A.M. Nouwens

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society
Pages	123-131
Publication status	Published - 1994
Event	conference; Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society, Miami Beach, FL, 9 October 1994 - Duration: 1 Jan 1994 → …

Conference

Conference	conference; Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society, Miami Beach, FL, 9 October 1994
Period	1/01/94 → …
Other	Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society, Miami Beach, FL, 9 October 1994

Cite this

@inproceedings{ae1b120a13e146d6ae5bc685e26b696c,

title = "The influence of a Si-doped layer in an AlGaAs/GaAs heterostructure on the damage introduced by CH4/H2/Ar ECR plasma etching",

author = "\{Hassel, van\}, J.G. and J.H. Maahury and L.M.F. Kaufmann and \{Es, van\}, C.M. and P.A.M. Nouwens",

year = "1994",

language = "English",

pages = "123--131",

booktitle = "Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society",

note = "conference; Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society, Miami Beach, FL, 9 October 1994 ; Conference date: 01-01-1994",

}

Hassel, van, JG, Maahury, JH, Kaufmann, LMF, Es, van, CM & Nouwens, PAM 1994, The influence of a Si-doped layer in an AlGaAs/GaAs heterostructure on the damage introduced by CH4/H2/Ar ECR plasma etching. in Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society. pp. 123-131, conference; Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society, Miami Beach, FL, 9 October 1994, 1/01/94.

The influence of a Si-doped layer in an AlGaAs/GaAs heterostructure on the damage introduced by CH4/H2/Ar ECR plasma etching. / Hassel, van, J.G.; Maahury, J.H.; Kaufmann, L.M.F. et al.
Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society. 1994. p. 123-131.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - The influence of a Si-doped layer in an AlGaAs/GaAs heterostructure on the damage introduced by CH4/H2/Ar ECR plasma etching

AU - Hassel, van, J.G.

AU - Maahury, J.H.

AU - Kaufmann, L.M.F.

AU - Es, van, C.M.

AU - Nouwens, P.A.M.

PY - 1994

Y1 - 1994

M3 - Conference contribution

SP - 123

EP - 131

BT - Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society

T2 - conference; Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society, Miami Beach, FL, 9 October 1994

Y2 - 1 January 1994

ER -