The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization

A.H.M. Smets, T. Matsui, M. Kondo, M.C.M. van de Sanden

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

A model is proposed to assign the hydrogen complexes in amorphous and nano/microcrystalline silicon to the hydride stretching modes in infrared spectra. We demonstrate that this analysis approach is a helpful tool to characterize the material properties of amorphous and microcrystalline silicon.

Original languageEnglish
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages721-724
Number of pages4
ISBN (Print)9781424429509
DOIs
Publication statusPublished - 1 Dec 2009
Event34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, United States
Duration: 7 Jun 200912 Jun 2009
Conference number: 34

Conference

Conference34th IEEE Photovoltaic Specialists Conference (PVSC 2009)
Abbreviated titlePVSC 2009
CountryUnited States
CityPhiladelphia
Period7/06/0912/06/09

Fingerprint Dive into the research topics of 'The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization'. Together they form a unique fingerprint.

Cite this