The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization

A.H.M. Smets; T. Matsui; M. Kondo; M.C.M. van de Sanden

doi:10.1109/PVSC.2009.5411182

The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization

A.H.M. Smets, T. Matsui, M. Kondo, M.C.M. van de Sanden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

Abstract

A model is proposed to assign the hydrogen complexes in amorphous and nano/microcrystalline silicon to the hydride stretching modes in infrared spectra. We demonstrate that this analysis approach is a helpful tool to characterize the material properties of amorphous and microcrystalline silicon.

Original language	English
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	721-724
Number of pages	4
ISBN (Print)	9781424429509
DOIs	https://doi.org/10.1109/PVSC.2009.5411182
Publication status	Published - 1 Dec 2009
Event	34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, United States Duration: 7 Jun 2009 → 12 Jun 2009 Conference number: 34

Conference

Conference	34th IEEE Photovoltaic Specialists Conference (PVSC 2009)
Abbreviated title	PVSC 2009
Country/Territory	United States
City	Philadelphia
Period	7/06/09 → 12/06/09

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10.1109/PVSC.2009.5411182

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Smets, A. H. M., Matsui, T., Kondo, M., & van de Sanden, M. C. M. (2009). The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 721-724). Article 5411182 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2009.5411182

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abstract = "A model is proposed to assign the hydrogen complexes in amorphous and nano/microcrystalline silicon to the hydride stretching modes in infrared spectra. We demonstrate that this analysis approach is a helpful tool to characterize the material properties of amorphous and microcrystalline silicon.",

author = "A.H.M. Smets and T. Matsui and M. Kondo and {van de Sanden}, M.C.M.",

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Smets, AHM, Matsui, T, Kondo, M & van de Sanden, MCM 2009, The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411182, Institute of Electrical and Electronics Engineers, Piscataway, pp. 721-724, 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), Philadelphia, Pennsylvania, United States, 7/06/09. https://doi.org/10.1109/PVSC.2009.5411182

The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization. / Smets, A.H.M.; Matsui, T.; Kondo, M. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Piscataway: Institute of Electrical and Electronics Engineers, 2009. p. 721-724 5411182.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Smets AHM, Matsui T, Kondo M, van de Sanden MCM. The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. 721-724. 5411182 doi: 10.1109/PVSC.2009.5411182

The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization

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