The etching of InP in HCl solutions : a chemical mechanism

P.H.L. Notten

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Abstract

The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was first order in molecular HCl concentration. The results leadus to conclude that, in HCl etchants, InP is dissolved by a purely chemical mechanism. The influence of chemical etchingon the anodic behavior of InP in these electrolytes is described
Original languageEnglish
Pages (from-to)2641-2644
Number of pages4
JournalJournal of the Electrochemical Society
Volume131
Issue number11
DOIs
Publication statusPublished - 1984

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