The etching of InP in HCl solutions : a chemical mechanism

P.H.L. Notten

doi:10.1149/1.2115375

The etching of InP in HCl solutions : a chemical mechanism

P.H.L. Notten

Electromechanics and Power Electronics

Research output: Contribution to journal › Article › Academic › peer-review

74 Citations (Scopus)

1239 Downloads (Pure)

Abstract

The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was first order in molecular HCl concentration. The results leadus to conclude that, in HCl etchants, InP is dissolved by a purely chemical mechanism. The influence of chemical etchingon the anodic behavior of InP in these electrolytes is described

Original language	English
Pages (from-to)	2641-2644
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	131
Issue number	11
DOIs	https://doi.org/10.1149/1.2115375
Publication status	Published - 1984

Access to Document

10.1149/1.2115375

Metis246645Final published version, 425 KB

Fingerprint Dive into the research topics of 'The etching of InP in HCl solutions : a chemical mechanism'. Together they form a unique fingerprint.

Cite this

@article{a4f0abbf9a654e418539b8eb972d31fa,

title = "The etching of InP in HCl solutions : a chemical mechanism",

abstract = "The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was first order in molecular HCl concentration. The results leadus to conclude that, in HCl etchants, InP is dissolved by a purely chemical mechanism. The influence of chemical etchingon the anodic behavior of InP in these electrolytes is described",

author = "P.H.L. Notten",

year = "1984",

doi = "10.1149/1.2115375",

language = "English",

volume = "131",

pages = "2641--2644",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "11",

}

TY - JOUR

T1 - The etching of InP in HCl solutions : a chemical mechanism

AU - Notten, P.H.L.

PY - 1984

Y1 - 1984

N2 - The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was first order in molecular HCl concentration. The results leadus to conclude that, in HCl etchants, InP is dissolved by a purely chemical mechanism. The influence of chemical etchingon the anodic behavior of InP in these electrolytes is described

AB - The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was first order in molecular HCl concentration. The results leadus to conclude that, in HCl etchants, InP is dissolved by a purely chemical mechanism. The influence of chemical etchingon the anodic behavior of InP in these electrolytes is described

U2 - 10.1149/1.2115375

DO - 10.1149/1.2115375

M3 - Article

VL - 131

SP - 2641

EP - 2644

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 11

ER -