The effect of thin oxide layers on shallow junction formation

P. A. Stolk, J. Schmitz, F. N. Cubaynes, A.C.M.C. van Brandenburg, J. G.M. Van Berkum, W. G. Van De Wijgert, F. Roozeboom

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This paper studies the influence of thin oxide screening, layers on the, formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. F011 screening oxides, in the range ftom 0 to 10 nm, it is f found! that the trade-off between junction depth and\ shet resistance ps is not affected! as long, as the implanted dose is adjusted. to compensate. for B trapping in the. oxide. F011 a fixed: implant: dose and enengy, however, minute variations in the oxide, thickness have, a. large influence on pI'ho which limits the reproducibility of. the junctionformation process.

Original languageEnglish
Title of host publicationESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages428-431
Number of pages4
ISBN (Print)2863322451
Publication statusPublished - 1 Jan 1999
Externally publishedYes
Event29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium
Duration: 13 Sep 199915 Sep 1999

Conference

Conference29th European Solid-State Device Research Conference, ESSDERC 1999
CountryBelgium
CityLeuven
Period13/09/9915/09/99

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