Abstract
This paper studies the influence of thin oxide screening, layers on the, formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. F011 screening oxides, in the range ftom 0 to 10 nm, it is f found! that the trade-off between junction depth and\ shet resistance ps is not affected! as long, as the implanted dose is adjusted. to compensate. for B trapping in the. oxide. F011 a fixed: implant: dose and enengy, however, minute variations in the oxide, thickness have, a. large influence on pI'ho which limits the reproducibility of. the junctionformation process.
Original language | English |
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Title of host publication | ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 428-431 |
Number of pages | 4 |
ISBN (Print) | 2863322451 |
Publication status | Published - 1 Jan 1999 |
Externally published | Yes |
Event | 29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium Duration: 13 Sept 1999 → 15 Sept 1999 |
Conference
Conference | 29th European Solid-State Device Research Conference, ESSDERC 1999 |
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Country/Territory | Belgium |
City | Leuven |
Period | 13/09/99 → 15/09/99 |