The effect of residual gas scattering on Ga ion beam patterning of graphene

N.F.W. Thissen; R.H.J. Vervuurt; J.J.L. Mulders; J.W. Weber; W.M.M. Kessels; A.A. Bol

doi:10.1063/1.4936334

The effect of residual gas scattering on Ga ion beam patterning of graphene

N.F.W. Thissen, R.H.J. Vervuurt, J.J.L. Mulders, J.W. Weber, W.M.M. Kessels, A.A. Bol

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Abstract

The patterning of graphene by a 30 kV Ga+focused ion beam(FIB) is studied by in-situ and ex-situRaman spectroscopy. It is found that the graphene surrounding the patterned target area can be damaged at remarkably large distances of more than 10 μm. We show that scattering of the Ga ions in the residual gas of the vacuum system is the main cause of the large range of lateral damage, as the size and shape of the tail of the ion beam were strongly dependent on the system background pressure. The range of the damage was therefore greatly reduced by working at low pressures and limiting the total amount of ions used. This makes FIB patterning a feasible alternative to electron beam lithography as long as residual gas scattering is taken into account

Original language	English
Article number	2131101
Number of pages	5
Journal	Applied Physics Letters
Volume	107
DOIs	https://doi.org/10.1063/1.4936334
Publication status	Published - 2015

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title = "The effect of residual gas scattering on Ga ion beam patterning of graphene",

abstract = "The patterning of graphene by a 30 kV Ga+focused ion beam(FIB) is studied by in-situ and ex-situRaman spectroscopy. It is found that the graphene surrounding the patterned target area can be damaged at remarkably large distances of more than 10 μm. We show that scattering of the Ga ions in the residual gas of the vacuum system is the main cause of the large range of lateral damage, as the size and shape of the tail of the ion beam were strongly dependent on the system background pressure. The range of the damage was therefore greatly reduced by working at low pressures and limiting the total amount of ions used. This makes FIB patterning a feasible alternative to electron beam lithography as long as residual gas scattering is taken into account",

author = "N.F.W. Thissen and R.H.J. Vervuurt and J.J.L. Mulders and J.W. Weber and W.M.M. Kessels and A.A. Bol",

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T1 - The effect of residual gas scattering on Ga ion beam patterning of graphene

AU - Thissen, N.F.W.

AU - Vervuurt, R.H.J.

AU - Mulders, J.J.L.

AU - Weber, J.W.

AU - Kessels, W.M.M.

AU - Bol, A.A.

PY - 2015

Y1 - 2015

N2 - The patterning of graphene by a 30 kV Ga+focused ion beam(FIB) is studied by in-situ and ex-situRaman spectroscopy. It is found that the graphene surrounding the patterned target area can be damaged at remarkably large distances of more than 10 μm. We show that scattering of the Ga ions in the residual gas of the vacuum system is the main cause of the large range of lateral damage, as the size and shape of the tail of the ion beam were strongly dependent on the system background pressure. The range of the damage was therefore greatly reduced by working at low pressures and limiting the total amount of ions used. This makes FIB patterning a feasible alternative to electron beam lithography as long as residual gas scattering is taken into account

AB - The patterning of graphene by a 30 kV Ga+focused ion beam(FIB) is studied by in-situ and ex-situRaman spectroscopy. It is found that the graphene surrounding the patterned target area can be damaged at remarkably large distances of more than 10 μm. We show that scattering of the Ga ions in the residual gas of the vacuum system is the main cause of the large range of lateral damage, as the size and shape of the tail of the ion beam were strongly dependent on the system background pressure. The range of the damage was therefore greatly reduced by working at low pressures and limiting the total amount of ions used. This makes FIB patterning a feasible alternative to electron beam lithography as long as residual gas scattering is taken into account

U2 - 10.1063/1.4936334

DO - 10.1063/1.4936334

M3 - Article

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 2131101

ER -

The effect of residual gas scattering on Ga ion beam patterning of graphene

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