Abstract
For backend processes, thermo-mechanical failure is one of the major failure modes. A representative metal structure in a Cu/low-k dual damascene process is examined considering the major thermal loads and process steps through combined finite element simulation with experiments. Firstly the low-k material, in our case the polymeric material SiLK (trade name of the DOW Chemical Company), is characterized and modeled to provide a reliable material model and data for the simulations. The coefficients for a Maxwell relaxation model are calculated, temperature dependency and its influence on the modulus are examined and the WLF coefficients are calculated providing time and temperature dependent material parameters for the process simulations. The main dual damascene process steps are simulated using the obtained material model. Stresses are examined at different critical locations. Furthermore an initial defect is placed at a low-k-oxide interface, where energy release rates are determined. Our results show that Cu/low-k structures exhibit significantly different reliability characteristics than their aluminum predecessors, are more critical from several design aspects. This not only makes the stress management in the stacks more difficult, but also strongly impact packaging.
| Original language | English |
|---|---|
| Title of host publication | 2004 Proceedings. 54th Electronic Components and Technology Conference |
| Place of Publication | Piscataway |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 913-917 |
| Number of pages | 5 |
| Volume | 1 |
| ISBN (Print) | 0-7803-8365-6 |
| DOIs | |
| Publication status | Published - 27 Dec 2004 |
| Event | 2004 54th Electronic Components and Technology Conference - Las Vegas, NV, United States Duration: 1 Jun 2004 → 4 Jun 2004 |
Conference
| Conference | 2004 54th Electronic Components and Technology Conference |
|---|---|
| Country/Territory | United States |
| City | Las Vegas, NV |
| Period | 1/06/04 → 4/06/04 |
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