The effect of magnetic field on the intrinsic detection efficiency of superconducting single-photon detectors

J.J. Renema; R.J. Rengelink; I. Komen; Q. Wang; R. Gaudio; K.P.M. Hoog, op 't; Z. Zhou; D. Sahin; A. Fiore; P.H. Kes; J. Aarts; M.P. Exter, van; M.J.A. Dood, de; E.F.C. Driessen

doi:10.1063/1.4914182

The effect of magnetic field on the intrinsic detection efficiency of superconducting single-photon detectors

J.J. Renema, R.J. Rengelink, I. Komen, Q. Wang, R. Gaudio, K.P.M. Hoog, op 't, Z. Zhou, D. Sahin, A. Fiore, P.H. Kes, J. Aarts, M.P. Exter, van, M.J.A. Dood, de, E.F.C. Driessen

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Abstract

We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs(100) substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are found. Photoluminescence lines from single quantum dots (QDs) with linewidths in the range of 250–400 µeV are observed from low-density InAs QDs grown at a distance of 10 nm from a GaAs surface deoxidized under an optimized condition. Our study shows that IAD is very promising for application in the growth of nanostructures on patterned GaAs substrates.

Original language	English
Article number	092602
Pages (from-to)	1-6
Journal	Applied Physics Letters
Volume	106
DOIs	https://doi.org/10.1063/1.4914182
Publication status	Published - 2015

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Renema, J. J., Rengelink, R. J., Komen, I., Wang, Q., Gaudio, R., Hoog, op 't, K. P. M., Zhou, Z., Sahin, D., Fiore, A., Kes, P. H., Aarts, J., Exter, van, M. P., Dood, de, M. J. A., & Driessen, E. F. C. (2015). The effect of magnetic field on the intrinsic detection efficiency of superconducting single-photon detectors. Applied Physics Letters, 106, 1-6. Article 092602. https://doi.org/10.1063/1.4914182

@article{058df93a3b1f4a7bb9b56833a6a00308,

title = "The effect of magnetic field on the intrinsic detection efficiency of superconducting single-photon detectors",

abstract = "We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs(100) substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are found. Photoluminescence lines from single quantum dots (QDs) with linewidths in the range of 250–400 µeV are observed from low-density InAs QDs grown at a distance of 10 nm from a GaAs surface deoxidized under an optimized condition. Our study shows that IAD is very promising for application in the growth of nanostructures on patterned GaAs substrates.",

author = "J.J. Renema and R.J. Rengelink and I. Komen and Q. Wang and R. Gaudio and {Hoog, op 't}, K.P.M. and Z. Zhou and D. Sahin and A. Fiore and P.H. Kes and J. Aarts and {Exter, van}, M.P. and {Dood, de}, M.J.A. and E.F.C. Driessen",

year = "2015",

doi = "10.1063/1.4914182",

language = "English",

volume = "106",

pages = "1--6",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

Renema, JJ, Rengelink, RJ, Komen, I, Wang, Q, Gaudio, R, Hoog, op 't, KPM, Zhou, Z, Sahin, D, Fiore, A, Kes, PH, Aarts, J, Exter, van, MP, Dood, de, MJA & Driessen, EFC 2015, 'The effect of magnetic field on the intrinsic detection efficiency of superconducting single-photon detectors', Applied Physics Letters, vol. 106, 092602, pp. 1-6. https://doi.org/10.1063/1.4914182

TY - JOUR

T1 - The effect of magnetic field on the intrinsic detection efficiency of superconducting single-photon detectors

AU - Renema, J.J.

AU - Rengelink, R.J.

AU - Komen, I.

AU - Wang, Q.

AU - Gaudio, R.

AU - Hoog, op 't, K.P.M.

AU - Zhou, Z.

AU - Sahin, D.

AU - Fiore, A.

AU - Kes, P.H.

AU - Aarts, J.

AU - Exter, van, M.P.

AU - Dood, de, M.J.A.

AU - Driessen, E.F.C.

PY - 2015

Y1 - 2015

N2 - We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs(100) substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are found. Photoluminescence lines from single quantum dots (QDs) with linewidths in the range of 250–400 µeV are observed from low-density InAs QDs grown at a distance of 10 nm from a GaAs surface deoxidized under an optimized condition. Our study shows that IAD is very promising for application in the growth of nanostructures on patterned GaAs substrates.

AB - We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs(100) substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are found. Photoluminescence lines from single quantum dots (QDs) with linewidths in the range of 250–400 µeV are observed from low-density InAs QDs grown at a distance of 10 nm from a GaAs surface deoxidized under an optimized condition. Our study shows that IAD is very promising for application in the growth of nanostructures on patterned GaAs substrates.

U2 - 10.1063/1.4914182

DO - 10.1063/1.4914182

M3 - Article

SN - 0003-6951

VL - 106

SP - 1

EP - 6

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 092602

ER -

The effect of magnetic field on the intrinsic detection efficiency of superconducting single-photon detectors

Abstract

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