The effect of magnetic field on the intrinsic detection efficiency of superconducting single-photon detectors

J.J. Renema, R.J. Rengelink, I. Komen, Q. Wang, R. Gaudio, K.P.M. Hoog, op 't, Z. Zhou, D. Sahin, A. Fiore, P.H. Kes, J. Aarts, M.P. Exter, van, M.J.A. Dood, de, E.F.C. Driessen

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Abstract

We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs(100) substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are found. Photoluminescence lines from single quantum dots (QDs) with linewidths in the range of 250–400 µeV are observed from low-density InAs QDs grown at a distance of 10 nm from a GaAs surface deoxidized under an optimized condition. Our study shows that IAD is very promising for application in the growth of nanostructures on patterned GaAs substrates.
Original languageEnglish
Article number092602
Pages (from-to)1-6
JournalApplied Physics Letters
Volume106
DOIs
Publication statusPublished - 2015

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