Abstract
A combination of low- and high-energy ion beam analysis techniques was used to determine the distribution of indium chloride compounds in model polymeric light-emitting diodes (p-LEDs). Parts of polymeric LEDs (poly-dialkoxyphenylenevinylene (OC/sub 1/C/sub 10/-PPV) on indium-tin-oxide (ITO) substrates) were exposed to a HCl/Ar flow to simulate the processes occurring during conversion of precursor PPVs and acid treatment of polymers. Samples with variable exposure times as well as pristine samples were studied with Rutherford backscattering spectrometry (RBS), low energy ion scattering (LEIS), X-ray photoelectron spectroscopy (XPS) and particle induced X-ray emission (PIXE). The RBS measurements show that after HCl exposure indium is distributed throughout the OC/sub 1/C/sub 10/-PPV layer. LEIS and XPS measurements indicate that the indium and chlorine are present at the outermost surface of the OC/sub 1/C/sub 10/-PPV layer. PIXE measurements in combination with the RBS data demonstrate that the indium chloride in the OC/sub 1/C/sub 10/-PPV layer is distributed in blisters ( phi = 50 mu m) which are orientated perpendicular to the sample surface. To study the OC/sub 1/C/sub 10/-PPV/ITO interface, samples were delaminated by peeling the polymeric layer of the ITO using Scotch tape. LEIS measurements on the fracture planes demonstrate the formation of an interfacial layer between the ITO and the PPV. The implications for p-LEDs are discussed
Original language | English |
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Pages (from-to) | 346-354 |
Journal | Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms |
Volume | 194 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 |