The disintegration of GaSb/GaAs nanostructures upon capping

A.J. Martin, J. Hwang, E.A. Marquis, E.P. Smakman, T.W. Saucer, G.V. Rodriguez, A.H. Hunter, V. Sih, P.M. Koenraad, J.D. Phillips, J. Millunchick

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Atom probe tomography and cross-sectional scanning tunneling microscopy show that GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band transition energies calculated using an 8-band k.p model of the capped dots with the observed dimensions are consistent with emission energies observed in photoluminescence data. These results emphasize the need for full three-dimensional characterization to develop an accurate understanding of the structure, and thus the optical properties, of buried quantum dots.
Original languageEnglish
Article number113103
Pages (from-to)113103-1/5
Number of pages5
JournalApplied Physics Letters
Volume102
Issue number11
DOIs
Publication statusPublished - 2013

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