The conductivity and band structure of some synthetic semiconductors based on M(dmit)2 (M = Ni, Pd, Pt)

G.J. Kramer, J.C. Jol, H.B. Brom, L.R. Groeneveld, J.A. Reedijk

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Abstract

The conductivity of the following six new low-dimensional compounds is reported: (Me4N)(Ni(dmit)2), (Et4N)(Ni(dmit)2), (Pr4N)(Ni(dmit)2), (Bu4N)(Ni(dmit)2), (Bu4N)(Pt(dmit)2) and (Et4N)0.5(Pd(dmit)2). Semiconducting behaviour is found for all the compounds investigated, with activation energies between 0.1 and 0.5 eV. The crystal structures have been established by X-ray diffraction. Using these, the band structure has been determined. It is shown that the compounds investigated are semiconductors each having a correlation gap resulting from an effective electron-electron repulsion of 1.0 eV.
Original languageEnglish
Pages (from-to)4591-4601
JournalJournal of Physics C: Solid State Physics
Volume21
Issue number25
DOIs
Publication statusPublished - 1988

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