The chemical-mechanical relationship of the SiOC(H) dielectric film

C.A. Yuan, O. Sluis, van der, G.Q. Zhang, L.J. Ernst, W.D. Driel, van, R.B.R. Silfhout, van, B.J. Thijsse

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


We propose an atomic simulation techniques tounderstand the chemical-mechanical relationship ofamorphous/porous silica based low-dielectric (low-k)material (SiOC(H)). The mechanical stiffness of the low k material is a critical issue for the reliability performance of the IC backend structures. Due to the amorphous nature of the low-k material which has till now unknown molecular strucure, a novel algorithm is required to generate the molecular structure. The molecular dynamics (MD) method is used as the simulation tool. Moreover, to understand the variation of the mechanical stiffness and density by the chemical configuration, sensitivity analyses have been performed. A fitting equation based on homogenization theory is established to represent the MD simulation results. The trends which are indicated by thesimulation results exhibit good agreements withexperiments from literature. Moreover, the simulationresults indicate that the slight variation of the chemical configuration can induce significant change of the mechanical stiffness (over 80%) but not the density.
Original languageEnglish
Title of host publicationProceedings of the 8th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2007), United Kingdom, London
Publication statusPublished - 2007


Dive into the research topics of 'The chemical-mechanical relationship of the SiOC(H) dielectric film'. Together they form a unique fingerprint.

Cite this