The business of fast ALD equipment for depositing alumina passivation layers on crystalline silicon solar cells

Ad Vermeer, Roger Gortzen, P. Poodt, F. Roozeboom

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Atomic Layer Deposition (ALD) is a gas phase deposition technique for depositing very high quality thin films with an unsurpassed conformality. The main drawback of ALD however is the very low deposition rate (∼ 1 nm/min). Recently, record deposition rates for alumina of up to 1 nm/s were reached using spatial ALD, while maintaining the typical assets regarding film quality as obtained by conventional, slow ALD [1]. This allows for ALD at high throughput numbers. One interesting application is passivation of crystalline silicon solar cells. Applying a thin alumina layer is reported to increase solar cell efficiency and enables the use of thinner wafers, thus reducing the main cost factor [2]. In this paper we report on the latest progress made by SoLayTec that delivered a working prototype of a system realizing full area single sided deposition of alumina on 156 × 156 mm 2, mono- and multi crystalline silicon wafers for solar cell applications. The alumina layers showed excellent passivation. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/hr. Finally, we report on the process of commercializing this technology.

Original languageEnglish
Title of host publicationThe Business of Nanotechnology III
Place of PublicationWarrendale
PublisherMaterials Research Society
Pages61-67
Number of pages7
ISBN (Print)9781618395559
DOIs
Publication statusPublished - 1 Dec 2011
Event2011 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 25 Apr 201129 Apr 2011

Publication series

NameMaterials Research Society symposium proceedings
Volume1353
ISSN (Print)0272-9172

Conference

Conference2011 Materials Research Society Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period25/04/1129/04/11

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