The atomic hydrogen flux during microcrystalline silicon solar cell deposition

M.C.M. Sanden, van de; G. Dingemans; M.N. van den Donker; D. Hrunski; A. Gordijn; W.M.M. Kessels

doi:10.1109/PVSC.2008.4922764

The atomic hydrogen flux during microcrystalline silicon solar cell deposition

M.C.M. Sanden, van de
, G. Dingemans
, M.N. van den Donker
, D. Hrunski
, A. Gordijn
, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

234 Downloads (Pure)

Abstract

Etch product detection by in situ optical emission spectroscopy is used to detect the phase transition from amorphous to microcrystalline silicon. In this contribution it is demonstrated that a calibrated version of this technique can be used to determine the absolute hydrogen flux under state-of-the-art silicon thin film deposition conditions.

Original language	English
Title of host publication	Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	000705-000708
ISBN (Print)	978-1-4244-1640-0
DOIs	https://doi.org/10.1109/PVSC.2008.4922764
Publication status	Published - 2009

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10.1109/PVSC.2008.4922764

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Sanden, van de, M. C. M., Dingemans, G., van den Donker, M. N., Hrunski, D., Gordijn, A., & Kessels, W. M. M. (2009). The atomic hydrogen flux during microcrystalline silicon solar cell deposition. In Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA (pp. 000705-000708). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2008.4922764

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abstract = "Etch product detection by in situ optical emission spectroscopy is used to detect the phase transition from amorphous to microcrystalline silicon. In this contribution it is demonstrated that a calibrated version of this technique can be used to determine the absolute hydrogen flux under state-of-the-art silicon thin film deposition conditions.",

author = "\{Sanden, van de\}, M.C.M. and G. Dingemans and \{van den Donker\}, M.N. and D. Hrunski and A. Gordijn and W.M.M. Kessels",

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doi = "10.1109/PVSC.2008.4922764",

language = "English",

isbn = "978-1-4244-1640-0",

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Sanden, van de, MCM, Dingemans, G, van den Donker, MN, Hrunski, D, Gordijn, A & Kessels, WMM 2009, The atomic hydrogen flux during microcrystalline silicon solar cell deposition. in Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA. Institute of Electrical and Electronics Engineers, Piscataway, pp. 000705-000708. https://doi.org/10.1109/PVSC.2008.4922764

The atomic hydrogen flux during microcrystalline silicon solar cell deposition. / Sanden, van de, M.C.M.; Dingemans, G.; van den Donker, M.N. et al.
Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA. Piscataway: Institute of Electrical and Electronics Engineers, 2009. p. 000705-000708.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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M3 - Conference contribution

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BT - Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA

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Sanden, van de MCM, Dingemans G, van den Donker MN, Hrunski D, Gordijn A, Kessels WMM. The atomic hydrogen flux during microcrystalline silicon solar cell deposition. In Proceedings of the 33th IEEE Photovoltaic Specialist Conference (PVSC 2008) 11-16 May 2008, San Diego, CA, USA. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. 000705-000708 doi: 10.1109/PVSC.2008.4922764

The atomic hydrogen flux during microcrystalline silicon solar cell deposition

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