The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter

R. Bock; J. Schmidt; S. Mau; B. Hoex; W.M.M. Kessels; R. Brendel

The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter

R. Bock, J. Schmidt, S. Mau, B. Hoex, W.M.M. Kessels, R. Brendel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemicalvapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screenprinted Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n+np+ solar cell structure, the so-called ALU+ cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.

Original language	English
Title of host publication	34th IEEE Photovoltaic Specialist Conference, Philadelphia, USA (2009)
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Publication status	Published - 2009
Event	34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, United States Duration: 7 Jun 2009 → 12 Jun 2009 Conference number: 34

Conference

Conference	34th IEEE Photovoltaic Specialists Conference (PVSC 2009)
Abbreviated title	PVSC 2009
Country/Territory	United States
City	Philadelphia
Period	7/06/09 → 12/06/09

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@inproceedings{ad42966acab0463aa0da1010425f71a2,

title = "The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter",

abstract = "Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemicalvapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screenprinted Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n+np+ solar cell structure, the so-called ALU+ cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.",

author = "R. Bock and J. Schmidt and S. Mau and B. Hoex and W.M.M. Kessels and R. Brendel",

year = "2009",

language = "English",

booktitle = "34th IEEE Photovoltaic Specialist Conference, Philadelphia, USA (2009)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "34th IEEE Photovoltaic Specialists Conference (PVSC 2009), PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Bock, R, Schmidt, J, Mau, S, Hoex, B, Kessels, WMM & Brendel, R 2009, The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter. in 34th IEEE Photovoltaic Specialist Conference, Philadelphia, USA (2009). Institute of Electrical and Electronics Engineers, Piscataway, 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), Philadelphia, Pennsylvania, United States, 7/06/09.

The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter. / Bock, R.; Schmidt, J.; Mau, S. et al.

34th IEEE Photovoltaic Specialist Conference, Philadelphia, USA (2009). Piscataway : Institute of Electrical and Electronics Engineers, 2009.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter

AU - Bock, R.

AU - Schmidt, J.

AU - Mau, S.

AU - Hoex, B.

AU - Kessels, W.M.M.

AU - Brendel, R.

N1 - Conference code: 34

PY - 2009

Y1 - 2009

N2 - Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemicalvapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screenprinted Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n+np+ solar cell structure, the so-called ALU+ cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.

AB - Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemicalvapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current density J0e of 246 fA/cm2, the Al2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screenprinted Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n+np+ solar cell structure, the so-called ALU+ cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.

M3 - Conference contribution

BT - 34th IEEE Photovoltaic Specialist Conference, Philadelphia, USA (2009)

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 34th IEEE Photovoltaic Specialists Conference (PVSC 2009)

Y2 - 7 June 2009 through 12 June 2009

ER -

The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter

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