Abstract
Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemicalvapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as
well as Al2O3/SiNx stacks, where the silicon nitride (SiNx) layer is deposited by PECVD. While the a-Si passivation of the Al-p+ emitter results in an emitter saturation current
density J0e of 246 fA/cm2, the Al2O3/SiNx double layers result in emitter saturation current densities as low as 160 fA/cm2, which is the lowest J0e reported so far for screenprinted Al-doped p+ emitters. Moreover, the Al2O3 as well as the Al2O3/SiNx stacks show an excellent stability during firing in a conveyor belt furnace at 900°C. We implement our newly developed passivated Al-p+ emitter into an n+np+
solar cell structure, the so-called ALU+ cell. An independently confirmed conversion efficiency of 20% is achieved on an aperture cell area of 4 cm2, clearly demonstrating the high-efficiency potential of our ALU+ cell concept.
Original language | English |
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Title of host publication | 34th IEEE Photovoltaic Specialist Conference, Philadelphia, USA (2009) |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Publication status | Published - 2009 |
Event | 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, United States Duration: 7 Jun 2009 → 12 Jun 2009 Conference number: 34 |
Conference
Conference | 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) |
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Abbreviated title | PVSC 2009 |
Country/Territory | United States |
City | Philadelphia |
Period | 7/06/09 → 12/06/09 |