The a-Si:H growth mechanism: Temperature study of the SiH3 surface reactivity and the surface silicon hydride composition during film growth

W. M.M. Kessels; Y. Barrell; P. J. Van den Oever; J. P.M. Hoefnagels; M. C.M. Van de Sanden

doi:10.1557/PROC-762-A9.3

The a-Si:H growth mechanism: Temperature study of the SiH₃ surface reactivity and the surface silicon hydride composition during film growth

W. M.M. Kessels
, Y. Barrell
, P. J. Van den Oever
, J. P.M. Hoefnagels
, M. C.M. Van de Sanden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

217 Downloads (Pure)

Abstract

We report on two experimental studies carried out to reveal insight into the interaction of SiH₃ radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH₃ on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450 °C) using the time-resolved cavity ringdown technique. The silicon hydrides -SiH_x on the a-Si:H surface during deposition have been studied by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH₃ dominated plasma conditions, it is found that the surface reactivity of SiH₃ is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from -SiH₃ to = SiH₂ to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.

Original language	English
Title of host publication	Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A
Editors	J.R. Abelson
Place of Publication	Warrendale
Publisher	Materials Research Society
Pages	431-436
Number of pages	6
ISBN (Print)	1-558-99699-0
DOIs	https://doi.org/10.1557/PROC-762-A9.3
Publication status	Published - 1 Dec 2003
Event	Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: 22 Apr 2003 → 25 Apr 2003

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	762
ISSN (Print)	0272-9172

Conference

Conference	Amorphous and Nanocrystalline Silicon-Based Films - 2003
Country/Territory	United States
City	San Francisco, CA
Period	22/04/03 → 25/04/03

Access to Document

10.1557/PROC-762-A9.3

731205943333129Final author version , 236 KB

Cite this

Kessels, W. M. M., Barrell, Y., Van den Oever, P. J., Hoefnagels, J. P. M., & Van de Sanden, M. C. M. (2003). The a-Si:H growth mechanism: Temperature study of the SiH₃ surface reactivity and the surface silicon hydride composition during film growth. In J. R. Abelson (Ed.), Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A (pp. 431-436). (Materials Research Society Symposium Proceedings; Vol. 762). Materials Research Society. https://doi.org/10.1557/PROC-762-A9.3

Kessels, W. M.M. ; Barrell, Y. ; Van den Oever, P. J. et al. / The a-Si:H growth mechanism : Temperature study of the SiH₃ surface reactivity and the surface silicon hydride composition during film growth. Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A. editor / J.R. Abelson. Warrendale : Materials Research Society, 2003. pp. 431-436 (Materials Research Society Symposium Proceedings).

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title = "The a-Si:H growth mechanism: Temperature study of the SiH3 surface reactivity and the surface silicon hydride composition during film growth",

abstract = "We report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450 °C) using the time-resolved cavity ringdown technique. The silicon hydrides -SiHx on the a-Si:H surface during deposition have been studied by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH3 dominated plasma conditions, it is found that the surface reactivity of SiH3 is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from -SiH3 to = SiH2 to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.",

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Kessels, WMM, Barrell, Y, Van den Oever, PJ, Hoefnagels, JPM & Van de Sanden, MCM 2003, The a-Si:H growth mechanism: Temperature study of the SiH₃ surface reactivity and the surface silicon hydride composition during film growth. in JR Abelson (ed.), Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A. Materials Research Society Symposium Proceedings, vol. 762, Materials Research Society, Warrendale, pp. 431-436, Amorphous and Nanocrystalline Silicon-Based Films - 2003, San Francisco, CA, United States, 22/04/03. https://doi.org/10.1557/PROC-762-A9.3

The a-Si:H growth mechanism: Temperature study of the SiH₃ surface reactivity and the surface silicon hydride composition during film growth. / Kessels, W. M.M.; Barrell, Y.; Van den Oever, P. J. et al.
Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A. ed. / J.R. Abelson. Warrendale: Materials Research Society, 2003. p. 431-436 (Materials Research Society Symposium Proceedings; Vol. 762).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T2 - Amorphous and Nanocrystalline Silicon-Based Films - 2003

AU - Kessels, W. M.M.

AU - Barrell, Y.

AU - Van den Oever, P. J.

AU - Hoefnagels, J. P.M.

AU - Van de Sanden, M. C.M.

PY - 2003/12/1

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N2 - We report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450 °C) using the time-resolved cavity ringdown technique. The silicon hydrides -SiHx on the a-Si:H surface during deposition have been studied by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH3 dominated plasma conditions, it is found that the surface reactivity of SiH3 is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from -SiH3 to = SiH2 to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.

AB - We report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450 °C) using the time-resolved cavity ringdown technique. The silicon hydrides -SiHx on the a-Si:H surface during deposition have been studied by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH3 dominated plasma conditions, it is found that the surface reactivity of SiH3 is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from -SiH3 to = SiH2 to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.

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SN - 1-558-99699-0

T3 - Materials Research Society Symposium Proceedings

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EP - 436

BT - Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A

A2 - Abelson, J.R.

PB - Materials Research Society

CY - Warrendale

Y2 - 22 April 2003 through 25 April 2003

ER -

Kessels WMM, Barrell Y, Van den Oever PJ, Hoefnagels JPM , Van de Sanden MCM. The a-Si:H growth mechanism: Temperature study of the SiH₃ surface reactivity and the surface silicon hydride composition during film growth. In Abelson JR, editor, Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A. Warrendale: Materials Research Society. 2003. p. 431-436. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-762-A9.3