The a-Si:H growth mechanism: Temperature study of the SiH3 surface reactivity and the surface silicon hydride composition during film growth

W. M.M. Kessels, Y. Barrell, P. J. Van den Oever, J. P.M. Hoefnagels, M. C.M. Van de Sanden

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

We report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450 °C) using the time-resolved cavity ringdown technique. The silicon hydrides -SiHx on the a-Si:H surface during deposition have been studied by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH3 dominated plasma conditions, it is found that the surface reactivity of SiH3 is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from -SiH3 to = SiH2 to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.

Original languageEnglish
Title of host publicationAmorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A
EditorsJ.R. Abelson
Place of PublicationWarrendale
PublisherMaterials Research Society
Pages431-436
Number of pages6
ISBN (Print)1-558-99699-0
DOIs
Publication statusPublished - 1 Dec 2003
EventAmorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States
Duration: 22 Apr 200325 Apr 2003

Publication series

NameMaterials Research Society Symposium Proceedings
Volume762
ISSN (Print)0272-9172

Conference

ConferenceAmorphous and Nanocrystalline Silicon-Based Films - 2003
CountryUnited States
CitySan Francisco, CA
Period22/04/0325/04/03

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