@inproceedings{56c9a809d4d74bd0b74a2238eaef6ff5,
title = "The a-Si:H growth mechanism: Temperature study of the SiH3 surface reactivity and the surface silicon hydride composition during film growth",
abstract = "We report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450 °C) using the time-resolved cavity ringdown technique. The silicon hydrides -SiHx on the a-Si:H surface during deposition have been studied by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH3 dominated plasma conditions, it is found that the surface reactivity of SiH3 is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from -SiH3 to = SiH2 to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.",
author = "Kessels, {W. M.M.} and Y. Barrell and {Van den Oever}, {P. J.} and Hoefnagels, {J. P.M.} and {Van de Sanden}, {M. C.M.}",
year = "2003",
month = dec,
day = "1",
doi = "10.1557/PROC-762-A9.3",
language = "English",
isbn = "1-558-99699-0",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "431--436",
editor = "J.R. Abelson",
booktitle = "Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22 - 25, 2003, San Francisco, California, U.S.A",
address = "United States",
note = "Amorphous and Nanocrystalline Silicon-Based Films - 2003 ; Conference date: 22-04-2003 Through 25-04-2003",
}