TY - JOUR
T1 - The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH/sub 3/ radicals via an Eley-Rideal mechanism
AU - Kessels, W.M.M.
AU - Smets, A.H.M.
AU - Sanden, van de, M.C.M.
PY - 2004
Y1 - 2004
N2 - The Eley–Rideal reaction scheme in which H abstraction from the a-Si:H surface takes place by SiH3 radicals directly from the gas phase is discussed as the predominant surface dangling bond creating mechanism during a-Si:H growth. As a rate-limiting step, this reaction can account for the experimentally observed temperature-independent SiH3 surface reactivity and the surface silicon–hydride composition –SiHx that changes with substrate temperature. The consequences of H abstraction via the Eley–Rideal mechanism in terms of the surface dangling bond coverage and surface diffusion processes are discussed.
AB - The Eley–Rideal reaction scheme in which H abstraction from the a-Si:H surface takes place by SiH3 radicals directly from the gas phase is discussed as the predominant surface dangling bond creating mechanism during a-Si:H growth. As a rate-limiting step, this reaction can account for the experimentally observed temperature-independent SiH3 surface reactivity and the surface silicon–hydride composition –SiHx that changes with substrate temperature. The consequences of H abstraction via the Eley–Rideal mechanism in terms of the surface dangling bond coverage and surface diffusion processes are discussed.
U2 - 10.1016/j.jnoncrysol.2004.02.015
DO - 10.1016/j.jnoncrysol.2004.02.015
M3 - Article
SN - 0022-3093
VL - 338-340
SP - 27
EP - 31
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
ER -