The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH/sub 3/ radicals via an Eley-Rideal mechanism

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Abstract

The Eley–Rideal reaction scheme in which H abstraction from the a-Si:H surface takes place by SiH3 radicals directly from the gas phase is discussed as the predominant surface dangling bond creating mechanism during a-Si:H growth. As a rate-limiting step, this reaction can account for the experimentally observed temperature-independent SiH3 surface reactivity and the surface silicon–hydride composition –SiHx that changes with substrate temperature. The consequences of H abstraction via the Eley–Rideal mechanism in terms of the surface dangling bond coverage and surface diffusion processes are discussed.
Original languageEnglish
Pages (from-to)27-31
JournalJournal of Non-Crystalline Solids
Volume338-340
DOIs
Publication statusPublished - 2004

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