The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers

L.K.J. Vandamme; H.J. Casier

doi:10.1109/ESSDER.2004.1356565

The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers

L.K.J. Vandamme, H.J. Casier

Integrated Circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

23 Citations (Scopus)

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Abstract

We investigated the dependence of 1/f noise on sheet resistance in poly crystalline resistors. The analysis is based on Hooge's empirical relation. The 1/f noise is given by SR/R2=Cus/WLf. Experimental results on poly-Si are compared with results on poly-SiGe, Ti-silicided poly-Si, metal Au-layers and RuO2 based thick film resistors. This review shows that the results are similar and are well described by the relation: Cus=KRsh with K=aqµ (lowest value 5×10-13 µm2/O). We explain the difference in 1/f noise between P and B doped samples and deviations from the linear dependence between Cus and sheet resistance Rsh.

Original language	English
Title of host publication	Solid-State Device Research conference, 2004. ESSDERC 2004. Proceedings of the 34th European, Leuven, Belgium, 21-23 September 2004
Editors	R.P. Mertens, C.L. Claeys
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	365-368
ISBN (Print)	0-7803-8478-4
DOIs	https://doi.org/10.1109/ESSDER.2004.1356565
Publication status	Published - 2004

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Vandamme, L. K. J., & Casier, H. J. (2004). The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers. In R. P. Mertens, & C. L. Claeys (Eds.), Solid-State Device Research conference, 2004. ESSDERC 2004. Proceedings of the 34th European, Leuven, Belgium, 21-23 September 2004 (pp. 365-368). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSDER.2004.1356565

Vandamme, L.K.J. ; Casier, H.J. / The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers. Solid-State Device Research conference, 2004. ESSDERC 2004. Proceedings of the 34th European, Leuven, Belgium, 21-23 September 2004. editor / R.P. Mertens ; C.L. Claeys. Piscataway : Institute of Electrical and Electronics Engineers, 2004. pp. 365-368

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title = "The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers",

abstract = "We investigated the dependence of 1/f noise on sheet resistance in poly crystalline resistors. The analysis is based on Hooge's empirical relation. The 1/f noise is given by SR/R2=Cus/WLf. Experimental results on poly-Si are compared with results on poly-SiGe, Ti-silicided poly-Si, metal Au-layers and RuO2 based thick film resistors. This review shows that the results are similar and are well described by the relation: Cus=KRsh with K=aqµ (lowest value 5×10-13 µm2/O). We explain the difference in 1/f noise between P and B doped samples and deviations from the linear dependence between Cus and sheet resistance Rsh.",

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Vandamme, LKJ & Casier, HJ 2004, The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers. in RP Mertens & CL Claeys (eds), Solid-State Device Research conference, 2004. ESSDERC 2004. Proceedings of the 34th European, Leuven, Belgium, 21-23 September 2004. Institute of Electrical and Electronics Engineers, Piscataway, pp. 365-368. https://doi.org/10.1109/ESSDER.2004.1356565

The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers. / Vandamme, L.K.J.; Casier, H.J.
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceedings of the 34th European, Leuven, Belgium, 21-23 September 2004. ed. / R.P. Mertens; C.L. Claeys. Piscataway: Institute of Electrical and Electronics Engineers, 2004. p. 365-368.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers

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AU - Casier, H.J.

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N2 - We investigated the dependence of 1/f noise on sheet resistance in poly crystalline resistors. The analysis is based on Hooge's empirical relation. The 1/f noise is given by SR/R2=Cus/WLf. Experimental results on poly-Si are compared with results on poly-SiGe, Ti-silicided poly-Si, metal Au-layers and RuO2 based thick film resistors. This review shows that the results are similar and are well described by the relation: Cus=KRsh with K=aqµ (lowest value 5×10-13 µm2/O). We explain the difference in 1/f noise between P and B doped samples and deviations from the linear dependence between Cus and sheet resistance Rsh.

AB - We investigated the dependence of 1/f noise on sheet resistance in poly crystalline resistors. The analysis is based on Hooge's empirical relation. The 1/f noise is given by SR/R2=Cus/WLf. Experimental results on poly-Si are compared with results on poly-SiGe, Ti-silicided poly-Si, metal Au-layers and RuO2 based thick film resistors. This review shows that the results are similar and are well described by the relation: Cus=KRsh with K=aqµ (lowest value 5×10-13 µm2/O). We explain the difference in 1/f noise between P and B doped samples and deviations from the linear dependence between Cus and sheet resistance Rsh.

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DO - 10.1109/ESSDER.2004.1356565

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Vandamme LKJ, Casier HJ. The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers. In Mertens RP, Claeys CL, editors, Solid-State Device Research conference, 2004. ESSDERC 2004. Proceedings of the 34th European, Leuven, Belgium, 21-23 September 2004. Piscataway: Institute of Electrical and Electronics Engineers. 2004. p. 365-368 doi: 10.1109/ESSDER.2004.1356565

The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers

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