Abstract
We present results achieved in the generation of terahertz wave by a semiconductor laser. It is a Fabry-Ṕrot based device with shallow grooves implemented on its p -side to engineer the longitudinal mode spectrum. The laser is dc-biased and temperature controlled at 298 K. The main two modes are separated by 3 nm at 1550 nm with a side-mode-suppression ratio of 25 dB. Using a frequency resolved optical gating, evidence of mode beating at 373 GHz is observed. With a bolometer interfaced to a Fourier transform interferometer, the second harmonic signal is measured at 690 GHz.
Original language | English |
---|---|
Article number | 081109 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 8 |
DOIs | |
Publication status | Published - 25 Feb 2008 |
Externally published | Yes |