Abstract
Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1-xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1-xSnx optoelectronic devices into the mid-infrared range.
| Original language | English |
|---|---|
| Title of host publication | 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-13 July 2016, Newport Beach, California |
| Place of Publication | Piscataway |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 21-22 |
| Number of pages | 2 |
| ISBN (Electronic) | 978-1-5090-1900-7 |
| ISBN (Print) | 978-1-5090-1901-4 |
| DOIs | |
| Publication status | Published - 2016 |
| Event | 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM 2016) - Newport Beach Marriott Hotel, Newport Beach, United States Duration: 11 Jul 2016 → 13 Jul 2016 http://www.photonicsconferences.org/conferences/welcome?id=357845c5e1df934a7bb02ae890b5c481 |
Conference
| Conference | 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM 2016) |
|---|---|
| Abbreviated title | SUM 2016 |
| Country/Territory | United States |
| City | Newport Beach |
| Period | 11/07/16 → 13/07/16 |
| Internet address |
Keywords
- GeSn
- germanium-tin
- photodetector
- strain
- nitride
- group-IV photonics
- Si photonics