Tensile-strained GeSn photodetectors with conformal nitride stressor

M. Morea, K. Zang, C.S. Fenrich, Y.-C. Huang, H. Chung, A.G. Curto, Y. Huo, T.I. Kamins, M.L. Brongersma, J.S. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1-xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1-xSnx optoelectronic devices into the mid-infrared range.
Original languageEnglish
Title of host publication2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-13 July 2016, Newport Beach, California
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages21-22
Number of pages2
ISBN (Electronic)978-1-5090-1900-7
ISBN (Print)978-1-5090-1901-4
DOIs
Publication statusPublished - 2016
Event2016 IEEE Photonics Society Summer Topical Meeting Series (SUM 2016) - Newport Beach Marriott Hotel, Newport Beach, United States
Duration: 11 Jul 201613 Jul 2016
http://www.photonicsconferences.org/conferences/welcome?id=357845c5e1df934a7bb02ae890b5c481

Conference

Conference2016 IEEE Photonics Society Summer Topical Meeting Series (SUM 2016)
Abbreviated titleSUM 2016
CountryUnited States
CityNewport Beach
Period11/07/1613/07/16
Internet address

Keywords

  • GeSn
  • germanium-tin
  • photodetector
  • strain
  • nitride
  • group-IV photonics
  • Si photonics

Cite this

Morea, M., Zang, K., Fenrich, C. S., Huang, Y-C., Chung, H., Curto, A. G., Huo, Y., Kamins, T. I., Brongersma, M. L., & Harris, J. S. (2016). Tensile-strained GeSn photodetectors with conformal nitride stressor. In 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-13 July 2016, Newport Beach, California (pp. 21-22). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PHOSST.2016.7548540