Temperature-induced smearing of the coulomb gap: experiment and computer simulation

I. Shlimak; M. Kaveh; R. Ussyshkin; V. Ginodman; S.D. Baranovskii; P. Thomas; H. Vaupel; R.W. Heijden, van der

doi:10.1103/PhysRevLett.75.4764

Temperature-induced smearing of the coulomb gap: experiment and computer simulation

I. Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, S.D. Baranovskii, P. Thomas, H. Vaupel, R.W. Heijden, van der

Photonics and Semiconductor Nanophysics

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Abstract

We present the first verification of the theoretically predicted effect of temperature-induced smearing of the Coulomb gap. Measurements of the variable-range-hopping conductivity (VRH) in samples of ion-implanted Si:As and computer simulation are used to study the density of states (DOS) near the Fermi level (FL) in the impurity band. The VRH is determined by the DOS integrated over some energy range that depends on temperature T and on the magnetic field B. Using the interplay between T and B we find that the DOS in the vicinity of the FL increases with increasing T.

Original language	English
Pages (from-to)	4764-4767
Number of pages	4
Journal	Physical Review Letters
Volume	75
Issue number	26
DOIs	https://doi.org/10.1103/PhysRevLett.75.4764
Publication status	Published - 1995

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title = "Temperature-induced smearing of the coulomb gap: experiment and computer simulation",

abstract = "We present the first verification of the theoretically predicted effect of temperature-induced smearing of the Coulomb gap. Measurements of the variable-range-hopping conductivity (VRH) in samples of ion-implanted Si:As and computer simulation are used to study the density of states (DOS) near the Fermi level (FL) in the impurity band. The VRH is determined by the DOS integrated over some energy range that depends on temperature T and on the magnetic field B. Using the interplay between T and B we find that the DOS in the vicinity of the FL increases with increasing T.",

author = "I. Shlimak and M. Kaveh and R. Ussyshkin and V. Ginodman and S.D. Baranovskii and P. Thomas and H. Vaupel and {Heijden, van der}, R.W.",

year = "1995",

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T1 - Temperature-induced smearing of the coulomb gap: experiment and computer simulation

AU - Shlimak, I.

AU - Kaveh, M.

AU - Ussyshkin, R.

AU - Ginodman, V.

AU - Baranovskii, S.D.

AU - Thomas, P.

AU - Vaupel, H.

AU - Heijden, van der, R.W.

PY - 1995

Y1 - 1995

N2 - We present the first verification of the theoretically predicted effect of temperature-induced smearing of the Coulomb gap. Measurements of the variable-range-hopping conductivity (VRH) in samples of ion-implanted Si:As and computer simulation are used to study the density of states (DOS) near the Fermi level (FL) in the impurity band. The VRH is determined by the DOS integrated over some energy range that depends on temperature T and on the magnetic field B. Using the interplay between T and B we find that the DOS in the vicinity of the FL increases with increasing T.

AB - We present the first verification of the theoretically predicted effect of temperature-induced smearing of the Coulomb gap. Measurements of the variable-range-hopping conductivity (VRH) in samples of ion-implanted Si:As and computer simulation are used to study the density of states (DOS) near the Fermi level (FL) in the impurity band. The VRH is determined by the DOS integrated over some energy range that depends on temperature T and on the magnetic field B. Using the interplay between T and B we find that the DOS in the vicinity of the FL increases with increasing T.

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DO - 10.1103/PhysRevLett.75.4764

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SP - 4764

EP - 4767

JO - Physical Review Letters

JF - Physical Review Letters

IS - 26

ER -

Temperature-induced smearing of the coulomb gap: experiment and computer simulation

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