Temperature-dependent photoluminescence of self-assembled (In,Ga)As quantum dots on GaAs (100): carrier redistribution through low-energy continuous states

T. Mano, R. Nötzel, Q. Gong, T. Lippen, van, G.J. Hamhuis, T.J. Eijkemans, J.H. Wolter

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Abstract

Temperature-dependent photoluminescence (PL) studies of an ensemble of self-assembled (In,Ga)As quantum dots (QDs) on GaAs (100) provide insight into the nature of the continuous states between the wetting layer (WL) and QDs. In addition to the well-known anomalous temperature dependence of the PL peak position and width around 90 K due to carrier (electron–hole pair) redistribution through the WL, we observe a similar behavior at much lower temperatures around 30 K. This behavior is attributed to carrier redistribution through the low-energy continuous states between the WL and QDs, directly proving their quasi-two-dimensional character. The smaller changes in the PL spectra than the WL-induced ones, however, indicate that the carrier redistribution and, thus, the spatial extent of the continuous states are restricted to a limited area around the QDs. This is also supported by the constant integrated PL intensity in this temperature range due to the absence of nonradiative recombination within these areas.
Original languageEnglish
Pages (from-to)6829-6832
JournalJournal of Applied Physics
Volume44
Issue number9A
DOIs
Publication statusPublished - 2005

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