Temperature-dependent built-in potential in organic semiconductor devices

M. Kemerink, J.M. Kramer, H.H.P. Gommans, R.A.J. Janssen

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

The temperature dependence of the built-in voltage of organic semiconductor devices is studied. The results are interpreted using a simple analytical model for the band bending at the electrodes. It is based on the notion that, even at zero current, diffusion may cause a significant charge density in the entire device, and hence a temperature dependent band bending. Both magnitude and temperature dependence of the built-in potential of various devices are consistently described by the model, as the effects of a thin LiF layer between cathode and active layer.
Original languageEnglish
Article number192108
Pages (from-to)192108-1/3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number19
DOIs
Publication statusPublished - 2006

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