Temperature-dependent aluminum incorporation in aluminum gallium arsenide layers grown by metalorganic vapor phase epitaxy [Erratum to document cited in CA109(16):139412y]

W.G.J.H.M. Sark, van, G.J.H.M. Janssen, M.H.J.M. Croon, de, X. Tang, L.J. Giling, W.M.A. Bik, C.P.M. Dunselman, F.H.P.M. Habraken, W.F. Weg, van der

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Original languageEnglish
Pages (from-to)6199-6199
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 1989

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