Temperature-dependent aluminum incorporation in aluminum gallium arsenide layers grown by metalorganic vapor phase epitaxy [Erratum to document cited in CA109(16):139412y]

W.G.J.H.M. Sark, van; G.J.H.M. Janssen; M.H.J.M. Croon, de; X. Tang; L.J. Giling; W.M.A. Bik; C.P.M. Dunselman; F.H.P.M. Habraken; W.F. Weg, van der

doi:10.1063/1.344505

Temperature-dependent aluminum incorporation in aluminum gallium arsenide layers grown by metalorganic vapor phase epitaxy [Erratum to document cited in CA109(16):139412y]

W.G.J.H.M. Sark, van, G.J.H.M. Janssen, M.H.J.M. Croon, de, X. Tang, L.J. Giling, W.M.A. Bik, C.P.M. Dunselman, F.H.P.M. Habraken, W.F. Weg, van der

Chemical Reactor Engineering

Research output: Contribution to journal › Article › Academic › peer-review

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Original language	English
Pages (from-to)	6199-6199
Journal	Journal of Applied Physics
Volume	66
Issue number	12
DOIs	https://doi.org/10.1063/1.344505
Publication status	Published - 1989

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Sark, van, W. G. J. H. M., Janssen, G. J. H. M., Croon, de, M. H. J. M., Tang, X., Giling, L. J., Bik, W. M. A., Dunselman, C. P. M., Habraken, F. H. P. M., & Weg, van der, W. F. (1989). Temperature-dependent aluminum incorporation in aluminum gallium arsenide layers grown by metalorganic vapor phase epitaxy [Erratum to document cited in CA109(16):139412y]. Journal of Applied Physics, 66(12), 6199-6199. https://doi.org/10.1063/1.344505

Sark, van, W.G.J.H.M. ; Janssen, G.J.H.M. ; Croon, de, M.H.J.M. ; Tang, X. ; Giling, L.J. ; Bik, W.M.A. ; Dunselman, C.P.M. ; Habraken, F.H.P.M. ; Weg, van der, W.F. / Temperature-dependent aluminum incorporation in aluminum gallium arsenide layers grown by metalorganic vapor phase epitaxy [Erratum to document cited in CA109(16):139412y]. In: Journal of Applied Physics. 1989 ; Vol. 66, No. 12. pp. 6199-6199.

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author = "{Sark, van}, W.G.J.H.M. and G.J.H.M. Janssen and {Croon, de}, M.H.J.M. and X. Tang and L.J. Giling and W.M.A. Bik and C.P.M. Dunselman and F.H.P.M. Habraken and {Weg, van der}, W.F.",

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Sark, van, WGJHM, Janssen, GJHM, Croon, de, MHJM, Tang, X, Giling, LJ, Bik, WMA, Dunselman, CPM, Habraken, FHPM & Weg, van der, WF 1989, 'Temperature-dependent aluminum incorporation in aluminum gallium arsenide layers grown by metalorganic vapor phase epitaxy [Erratum to document cited in CA109(16):139412y]', Journal of Applied Physics, vol. 66, no. 12, pp. 6199-6199. https://doi.org/10.1063/1.344505

Temperature-dependent aluminum incorporation in aluminum gallium arsenide layers grown by metalorganic vapor phase epitaxy [Erratum to document cited in CA109(16):139412y]. / Sark, van, W.G.J.H.M.; Janssen, G.J.H.M.; Croon, de, M.H.J.M.; Tang, X.; Giling, L.J.; Bik, W.M.A.; Dunselman, C.P.M.; Habraken, F.H.P.M.; Weg, van der, W.F.

In: Journal of Applied Physics, Vol. 66, No. 12, 1989, p. 6199-6199.

Research output: Contribution to journal › Article › Academic › peer-review

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AU - Sark, van, W.G.J.H.M.

AU - Janssen, G.J.H.M.

AU - Croon, de, M.H.J.M.

AU - Tang, X.

AU - Giling, L.J.

AU - Bik, W.M.A.

AU - Dunselman, C.P.M.

AU - Habraken, F.H.P.M.

AU - Weg, van der, W.F.

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