Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

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Abstract

The scaling behavior of the surface morphology of hydrogenated amorphous silicon deposited from a SiH3 dominated plasma has been studied using atomic force microscopy and in situ ellipsometry. The observed substrate temperature dependence of growth exponent reflects a crossover behavior from random deposition at 100 °C to a surface diffusion controlled smoothening around 250 °C to full surface relaxation around 500 °C. This crossover behavior has been reproduced by Monte Carlo simulations assuming a site dependent surface diffusion process, revealing an activation energy of ~1.0 eV for the ruling surface smoothening mechanism. The implications for a-Si:H growth are discussed.
Original languageEnglish
Pages (from-to)865-867
JournalApplied Physics Letters
Volume82
Issue number8
DOIs
Publication statusPublished - 2003

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