TY - JOUR
T1 - Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth
AU - Kessels, W.M.M.
AU - Hoefnagels, J.P.M.
AU - Oever, van den, P.J.
AU - Barrell, Y.
AU - Sanden, van de, M.C.M.
PY - 2003
Y1 - 2003
N2 - For hydrogenated amorphous silicon (a-Si:H) film growth governed by SiH3 plasma radicals, the surface reaction probability ß of SiH3 and the silicon hydride (–SiHx) composition of the a-Si:H surface have been investigated by time-resolved cavity ringdown and attenuated total reflection infrared spectroscopy, respectively. The surface hydride composition is found to change with substrate temperature from –SiH3-rich at low temperatures to SiH-rich at higher temperatures. The surface reaction probability ß, ranging from 0.20 to over 0.40 and with a mean value of ß=0.30±0.03, does not show any indication of temperature dependence and is therefore not affected by the change in surface hydride composition. It is discussed that these observations can be explained by a-Si:H film growth that is governed by H abstraction from the surface by SiH3 in an Eley-Rideal mechanism followed by the adsorption of SiH3 at the dangling bond created.
AB - For hydrogenated amorphous silicon (a-Si:H) film growth governed by SiH3 plasma radicals, the surface reaction probability ß of SiH3 and the silicon hydride (–SiHx) composition of the a-Si:H surface have been investigated by time-resolved cavity ringdown and attenuated total reflection infrared spectroscopy, respectively. The surface hydride composition is found to change with substrate temperature from –SiH3-rich at low temperatures to SiH-rich at higher temperatures. The surface reaction probability ß, ranging from 0.20 to over 0.40 and with a mean value of ß=0.30±0.03, does not show any indication of temperature dependence and is therefore not affected by the change in surface hydride composition. It is discussed that these observations can be explained by a-Si:H film growth that is governed by H abstraction from the surface by SiH3 in an Eley-Rideal mechanism followed by the adsorption of SiH3 at the dangling bond created.
U2 - 10.1016/j.susc.2003.10.030
DO - 10.1016/j.susc.2003.10.030
M3 - Article
VL - 547
SP - L865-L870
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 3
ER -