Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

W.M.M. Kessels; J.P.M. Hoefnagels; P.J. Oever, van den; Y. Barrell; M.C.M. Sanden, van de

doi:10.1016/j.susc.2003.10.030

Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

W.M.M. Kessels, J.P.M. Hoefnagels, P.J. Oever, van den, Y. Barrell, M.C.M. Sanden, van de

Research output: Contribution to journal › Article › Academic › peer-review

34 Citations (Scopus)

Abstract

For hydrogenated amorphous silicon (a-Si:H) film growth governed by SiH3 plasma radicals, the surface reaction probability ß of SiH3 and the silicon hydride (–SiHx) composition of the a-Si:H surface have been investigated by time-resolved cavity ringdown and attenuated total reflection infrared spectroscopy, respectively. The surface hydride composition is found to change with substrate temperature from –SiH3-rich at low temperatures to SiH-rich at higher temperatures. The surface reaction probability ß, ranging from 0.20 to over 0.40 and with a mean value of ß=0.30±0.03, does not show any indication of temperature dependence and is therefore not affected by the change in surface hydride composition. It is discussed that these observations can be explained by a-Si:H film growth that is governed by H abstraction from the surface by SiH3 in an Eley-Rideal mechanism followed by the adsorption of SiH3 at the dangling bond created.

Original language	English
Pages (from-to)	L865-L870
Journal	Surface Science
Volume	547
Issue number	3
DOIs	https://doi.org/10.1016/j.susc.2003.10.030
Publication status	Published - 2003

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@article{4fd2cf13ec774f8bb0605b2ca1fe40c8,

title = "Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth",

abstract = "For hydrogenated amorphous silicon (a-Si:H) film growth governed by SiH3 plasma radicals, the surface reaction probability {\ss} of SiH3 and the silicon hydride (–SiHx) composition of the a-Si:H surface have been investigated by time-resolved cavity ringdown and attenuated total reflection infrared spectroscopy, respectively. The surface hydride composition is found to change with substrate temperature from –SiH3-rich at low temperatures to SiH-rich at higher temperatures. The surface reaction probability {\ss}, ranging from 0.20 to over 0.40 and with a mean value of {\ss}=0.30±0.03, does not show any indication of temperature dependence and is therefore not affected by the change in surface hydride composition. It is discussed that these observations can be explained by a-Si:H film growth that is governed by H abstraction from the surface by SiH3 in an Eley-Rideal mechanism followed by the adsorption of SiH3 at the dangling bond created.",

author = "W.M.M. Kessels and J.P.M. Hoefnagels and {Oever, van den}, P.J. and Y. Barrell and {Sanden, van de}, M.C.M.",

year = "2003",

doi = "10.1016/j.susc.2003.10.030",

language = "English",

volume = "547",

pages = "L865--L870",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "3",

}

Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth. / Kessels, W.M.M.; Hoefnagels, J.P.M.; Oever, van den, P.J.; Barrell, Y.; Sanden, van de, M.C.M.

In: Surface Science, Vol. 547, No. 3, 2003, p. L865-L870.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

AU - Kessels, W.M.M.

AU - Hoefnagels, J.P.M.

AU - Oever, van den, P.J.

AU - Barrell, Y.

AU - Sanden, van de, M.C.M.

PY - 2003

Y1 - 2003

N2 - For hydrogenated amorphous silicon (a-Si:H) film growth governed by SiH3 plasma radicals, the surface reaction probability ß of SiH3 and the silicon hydride (–SiHx) composition of the a-Si:H surface have been investigated by time-resolved cavity ringdown and attenuated total reflection infrared spectroscopy, respectively. The surface hydride composition is found to change with substrate temperature from –SiH3-rich at low temperatures to SiH-rich at higher temperatures. The surface reaction probability ß, ranging from 0.20 to over 0.40 and with a mean value of ß=0.30±0.03, does not show any indication of temperature dependence and is therefore not affected by the change in surface hydride composition. It is discussed that these observations can be explained by a-Si:H film growth that is governed by H abstraction from the surface by SiH3 in an Eley-Rideal mechanism followed by the adsorption of SiH3 at the dangling bond created.

AB - For hydrogenated amorphous silicon (a-Si:H) film growth governed by SiH3 plasma radicals, the surface reaction probability ß of SiH3 and the silicon hydride (–SiHx) composition of the a-Si:H surface have been investigated by time-resolved cavity ringdown and attenuated total reflection infrared spectroscopy, respectively. The surface hydride composition is found to change with substrate temperature from –SiH3-rich at low temperatures to SiH-rich at higher temperatures. The surface reaction probability ß, ranging from 0.20 to over 0.40 and with a mean value of ß=0.30±0.03, does not show any indication of temperature dependence and is therefore not affected by the change in surface hydride composition. It is discussed that these observations can be explained by a-Si:H film growth that is governed by H abstraction from the surface by SiH3 in an Eley-Rideal mechanism followed by the adsorption of SiH3 at the dangling bond created.

U2 - 10.1016/j.susc.2003.10.030

DO - 10.1016/j.susc.2003.10.030

M3 - Article

VL - 547

SP - L865-L870

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 3

ER -