Temperature dependence and electrical properties of dominant low-frequency noise source in SiGe HBT

S.P.O. Bruce, L.K.J. Vandamme, A. Rydberg

Research output: Contribution to journal › Article › Academic › peer-review

7 Citations (Scopus)

Original language	English
Pages (from-to)	1107-1112
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	47
Issue number	5
DOIs	https://doi.org/10.1109/16.841247
Publication status	Published - 2000

Access to Document

@article{b46578a239664d72ab7031cd72a3af2c,

title = "Temperature dependence and electrical properties of dominant low-frequency noise source in SiGe HBT",

author = "S.P.O. Bruce and L.K.J. Vandamme and A. Rydberg",

year = "2000",

doi = "10.1109/16.841247",

language = "English",

volume = "47",

pages = "1107--1112",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

number = "5",

}

TY - JOUR

T1 - Temperature dependence and electrical properties of dominant low-frequency noise source in SiGe HBT

AU - Bruce, S.P.O.

AU - Vandamme, L.K.J.

AU - Rydberg, A.

PY - 2000

Y1 - 2000

U2 - 10.1109/16.841247

DO - 10.1109/16.841247

M3 - Article

SN - 0018-9383

VL - 47

SP - 1107

EP - 1112

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -