TY - JOUR
T1 - Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H
AU - Kessels, W.M.M.
AU - Severens, R.J.
AU - Sanden, van de, M.C.M.
AU - Schram, D.C.
PY - 1998
Y1 - 1998
N2 - Hydrogen incorporation in amorphous hydrogenated silicon produced by the expanding thermal plasma is investigated as a function of substrate temperature at three different deposition rates of 0.3, 3 and 11 nm/s. The increase of the refractive index with increasing substrate temperature is attributed to decreasing hydrogen concentration. The latter result is explained by a model which assumes a thermally activated hydrogen cross-linking step immediately after the chemisorption of a silyl radical. The activation energy for this process is about 150 meV. For growth rates larger than 1 nm/s the hydrogen content is significantly growth-rate dependent.
AB - Hydrogen incorporation in amorphous hydrogenated silicon produced by the expanding thermal plasma is investigated as a function of substrate temperature at three different deposition rates of 0.3, 3 and 11 nm/s. The increase of the refractive index with increasing substrate temperature is attributed to decreasing hydrogen concentration. The latter result is explained by a model which assumes a thermally activated hydrogen cross-linking step immediately after the chemisorption of a silyl radical. The activation energy for this process is about 150 meV. For growth rates larger than 1 nm/s the hydrogen content is significantly growth-rate dependent.
U2 - 10.1016/S0022-3093(98)00028-3
DO - 10.1016/S0022-3093(98)00028-3
M3 - Article
VL - 227-230
SP - 133
EP - 137
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
IS - 1
ER -