Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H

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Abstract

Hydrogen incorporation in amorphous hydrogenated silicon produced by the expanding thermal plasma is investigated as a function of substrate temperature at three different deposition rates of 0.3, 3 and 11 nm/s. The increase of the refractive index with increasing substrate temperature is attributed to decreasing hydrogen concentration. The latter result is explained by a model which assumes a thermally activated hydrogen cross-linking step immediately after the chemisorption of a silyl radical. The activation energy for this process is about 150 meV. For growth rates larger than 1 nm/s the hydrogen content is significantly growth-rate dependent.
Original languageEnglish
Pages (from-to)133-137
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue number1
DOIs
Publication statusPublished - 1998

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