Temperature and growth rate effects during the fast deposition of a-Si:H

M.C.M. Sanden, van de; R.J. Severens; W.M.M. Kessels; D.C. Schram

Temperature and growth rate effects during the fast deposition of a-Si:H

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

53 Downloads (Pure)

Original language	English
Title of host publication	ICAMS : 17th International conference on Amorphous and Microcrystalline Semiconductors, Budapest, 25-29 August, 1997, Final programme abstracts
Pages	124
Publication status	Published - 1997

Access to Document

593023Final published version, 38.4 KB

Cite this

@inproceedings{9f52186684a24aa0bd8c8f92731cea3c,

title = "Temperature and growth rate effects during the fast deposition of a-Si:H",

author = "\{Sanden, van de\}, M.C.M. and R.J. Severens and W.M.M. Kessels and D.C. Schram",

year = "1997",

language = "English",

pages = "124",

booktitle = "ICAMS : 17th International conference on Amorphous and Microcrystalline Semiconductors, Budapest, 25-29 August, 1997, Final programme abstracts",

}

Temperature and growth rate effects during the fast deposition of a-Si:H. / Sanden, van de, M.C.M.; Severens, R.J.; Kessels, W.M.M. et al.
ICAMS : 17th International conference on Amorphous and Microcrystalline Semiconductors, Budapest, 25-29 August, 1997, Final programme abstracts. 1997. p. 124.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Temperature and growth rate effects during the fast deposition of a-Si:H

AU - Sanden, van de, M.C.M.

AU - Severens, R.J.

AU - Kessels, W.M.M.

AU - Schram, D.C.

PY - 1997

Y1 - 1997

M3 - Conference contribution

SP - 124

BT - ICAMS : 17th International conference on Amorphous and Microcrystalline Semiconductors, Budapest, 25-29 August, 1997, Final programme abstracts

ER -