Temperature and field dependence of the mobility in 1D for a Gaussian density of states

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Abstract

The temperature and field-dependent mobility of a charge carrier in a gaussian density of states has been analyzed, based on a numerically exact solution of the Master equation. In this way we get a microscopic insight into the origin of the mobility and find some new features pointing to relevance of the Fermi level and of variable-range hopping to sites further away than nearest ones.
Original languageEnglish
Pages (from-to)164-167
JournalPhysica Status Solidi C: Conferences
Volume1
Issue number1
DOIs
Publication statusPublished - 2004

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