TY - JOUR
T1 - Temperature and electric field dependence of hopping transport in ion-implanted Si:As
AU - Gang, Chen
AU - Koppen, H.D.
AU - van der Heijden, R.W.
AU - de Waele, A.T.A.M.
AU - Gijsman, H.M.
AU - Tielen, F.P.B.
PY - 1989/10
Y1 - 1989/10
N2 - The temperature and electric field dependence of the resistivity of thin layers of As-doped, not intentionally compensated, Si with concentrationsjust below that of the metal-insulator transition are reported. The temperature dependence gives evidence for variable range hopping with a coulomb gap in the density of states at the Fermi-level. From the field dependence of the resistivity, a characteristic length of ≈25 nm can be deduced, which is of the order of magnitude of the hopping length.
AB - The temperature and electric field dependence of the resistivity of thin layers of As-doped, not intentionally compensated, Si with concentrationsjust below that of the metal-insulator transition are reported. The temperature dependence gives evidence for variable range hopping with a coulomb gap in the density of states at the Fermi-level. From the field dependence of the resistivity, a characteristic length of ≈25 nm can be deduced, which is of the order of magnitude of the hopping length.
UR - http://www.scopus.com/inward/record.url?scp=0024754697&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(89)90517-6
DO - 10.1016/0038-1098(89)90517-6
M3 - Article
AN - SCOPUS:0024754697
VL - 72
SP - 173
EP - 176
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 2
ER -