Temperature and electric field dependence of hopping transport in ion-implanted Si:As

Chen Gang, H.D. Koppen, R.W. van der Heijden, A.T.A.M. de Waele, H.M. Gijsman, F.P.B. Tielen

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

The temperature and electric field dependence of the resistivity of thin layers of As-doped, not intentionally compensated, Si with concentrationsjust below that of the metal-insulator transition are reported. The temperature dependence gives evidence for variable range hopping with a coulomb gap in the density of states at the Fermi-level. From the field dependence of the resistivity, a characteristic length of ≈25 nm can be deduced, which is of the order of magnitude of the hopping length.

Original languageEnglish
Pages (from-to)173-176
Number of pages4
JournalSolid State Communications
Volume72
Issue number2
DOIs
Publication statusPublished - Oct 1989

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