TEM studies of as-grown, irradiated and annealed InN films

Z. Liliental-Weber; R.E. Jones; H.C.M. Genuchten, van; K.M. Yu; W. Walukiewicz; J.W. Ager; E.E. Haller; H. Lu; W.J. Schaff

doi:10.1016/j.physb.2007.09.042

TEM studies of as-grown, irradiated and annealed InN films

Z. Liliental-Weber, R.E. Jones, H.C.M. Genuchten, van, K.M. Yu, W. Walukiewicz, J.W. Ager, E.E. Haller, H. Lu, W.J. Schaff

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

7 Citations (Scopus)

Abstract

Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irradiation with 2MeV He+ ions, and annealing after irradiation. Defects formed after each procedure were discussed. The results of these studies show that randomly distributed extended defects, formed upon irradiation, can come to uniform distribution throughout the samples upon annealing. An irradiation by 2MeV He+ ions followed by thermal annealing at 425 and 475 1C leads to the unusual increase of the electron mobility of these films. Annealing at 500 1C led to the formation of In clusters and delamination of the film from the substrates.

Original language	English
Pages (from-to)	646-649
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	401-402
DOIs	https://doi.org/10.1016/j.physb.2007.09.042
Publication status	Published - 2007

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@article{815310478e1f4904bef03bbd38b19271,

title = "TEM studies of as-grown, irradiated and annealed InN films",

abstract = "Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irradiation with 2MeV He+ ions, and annealing after irradiation. Defects formed after each procedure were discussed. The results of these studies show that randomly distributed extended defects, formed upon irradiation, can come to uniform distribution throughout the samples upon annealing. An irradiation by 2MeV He+ ions followed by thermal annealing at 425 and 475 1C leads to the unusual increase of the electron mobility of these films. Annealing at 500 1C led to the formation of In clusters and delamination of the film from the substrates.",

author = "Z. Liliental-Weber and R.E. Jones and {Genuchten, van}, H.C.M. and K.M. Yu and W. Walukiewicz and J.W. Ager and E.E. Haller and H. Lu and W.J. Schaff",

year = "2007",

doi = "10.1016/j.physb.2007.09.042",

language = "English",

volume = "401-402",

pages = "646--649",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - TEM studies of as-grown, irradiated and annealed InN films

AU - Liliental-Weber, Z.

AU - Jones, R.E.

AU - Genuchten, van, H.C.M.

AU - Yu, K.M.

AU - Walukiewicz, W.

AU - Ager, J.W.

AU - Haller, E.E.

AU - Lu, H.

AU - Schaff, W.J.

PY - 2007

Y1 - 2007

N2 - Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irradiation with 2MeV He+ ions, and annealing after irradiation. Defects formed after each procedure were discussed. The results of these studies show that randomly distributed extended defects, formed upon irradiation, can come to uniform distribution throughout the samples upon annealing. An irradiation by 2MeV He+ ions followed by thermal annealing at 425 and 475 1C leads to the unusual increase of the electron mobility of these films. Annealing at 500 1C led to the formation of In clusters and delamination of the film from the substrates.

AB - Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irradiation with 2MeV He+ ions, and annealing after irradiation. Defects formed after each procedure were discussed. The results of these studies show that randomly distributed extended defects, formed upon irradiation, can come to uniform distribution throughout the samples upon annealing. An irradiation by 2MeV He+ ions followed by thermal annealing at 425 and 475 1C leads to the unusual increase of the electron mobility of these films. Annealing at 500 1C led to the formation of In clusters and delamination of the film from the substrates.

U2 - 10.1016/j.physb.2007.09.042

DO - 10.1016/j.physb.2007.09.042

M3 - Article

SN - 0921-4526

VL - 401-402

SP - 646

EP - 649

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

TEM studies of as-grown, irradiated and annealed InN films

Abstract

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