Abstract
In this chapter we will discuss the use of InAs quantum dots for telecom
wavelength single photon applications. We will describe two molecular
beam epitaxial growth techniques to achieve low density distributions of
quantum dots that are large enough to emit telecom wavelength photons at low temperatures. Single dot spectroscopy in conjunction with timeresolved measurements provide information on the origin of the main emission lines. Correlation spectroscopy using both InGaAs avalanche photodiodes and superconducting single photon detectors will be dis cussed and used to characterize the photon emission statistics. Ungated
measurements at telecom wavelengths using the superconducting single photon detectors offer ready access to additional details in the secondorder correlation function. Progress towards practical electrically driven sources will be presented including oxide aperture and planar cavity LEDs. We will see how the inclusion of electrical contacts enables additional flexibility in the temporal output of a device by tuning the emission wavelength with time-varying Stark shifts.
| Original language | English |
|---|---|
| Title of host publication | Semiconductor Quantum Bits |
| Editors | F. Henneberger, O. Benson |
| Publisher | Pan Stanford Publishing |
| Pages | 389-421 |
| ISBN (Print) | 978-981-4241-05-2 |
| Publication status | Published - 2008 |