Technology of the diode programmable read only memory

H. Lifka, P. H. Woerlee, C. De Graaf, C. M. Hart, P. J.M. Janssen, G. M. Paulzen, M. J.J. Theunissen, P. W.H. De Vreede

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

In this paper the key technology steps of the Diode Programmable Read Only Memory (DPROM) will be presented. The device performance of the high voltage transistors used in DPROM are presented. The influence of trench processing on devices will be shown. Also parasitic devices, formed due to the usage of trench poly, and there suppression will be shown.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsH. Grunbacher
PublisherIEEE Computer Society
Pages272-275
Number of pages4
ISBN (Print)2863322214
DOIs
Publication statusPublished - 1 Jan 1997
Externally publishedYes
Event27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany
Duration: 22 Sep 199724 Sep 1997

Conference

Conference27th European Solid-State Device Research Conference, ESSDERC 1997
CountryGermany
CityStuttgart
Period22/09/9724/09/97

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  • Cite this

    Lifka, H., Woerlee, P. H., De Graaf, C., Hart, C. M., Janssen, P. J. M., Paulzen, G. M., Theunissen, M. J. J., & De Vreede, P. W. H. (1997). Technology of the diode programmable read only memory. In H. Grunbacher (Ed.), European Solid-State Device Research Conference (pp. 272-275). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.1997.194418