Technology and device development for active/passive integration on InP_based membrane on Si (IMOS)

Rui Zhang

Research output: ThesisPhd Thesis 1 (Research TU/e / Graduation TU/e)Academic

LanguageEnglish
QualificationDoctor of Philosophy
Awarding Institution
  • Department of Electrical Engineering
Supervisors/Advisors
  • Smit, Meint, Promotor
  • van der Tol, Jos, Copromotor
Award date5 Sep 2013
Place of PublicationEindhoven
Publisher
Print ISBNs978-90-386-3426-5
DOIs
StatePublished - 2013

Cite this

Zhang, Rui. / Technology and device development for active/passive integration on InP_based membrane on Si (IMOS). Eindhoven : Technische Universiteit Eindhoven, 2013. 187 p.
@phdthesis{b5b04dd44b4c449fa35154687514c729,
title = "Technology and device development for active/passive integration on InP_based membrane on Si (IMOS)",
author = "Rui Zhang",
year = "2013",
doi = "10.6100/IR757861",
language = "English",
isbn = "978-90-386-3426-5",
publisher = "Technische Universiteit Eindhoven",
school = "Department of Electrical Engineering",

}

Zhang, R 2013, 'Technology and device development for active/passive integration on InP_based membrane on Si (IMOS)', Doctor of Philosophy, Department of Electrical Engineering, Eindhoven. DOI: 10.6100/IR757861

Technology and device development for active/passive integration on InP_based membrane on Si (IMOS). / Zhang, Rui.

Eindhoven : Technische Universiteit Eindhoven, 2013. 187 p.

Research output: ThesisPhd Thesis 1 (Research TU/e / Graduation TU/e)Academic

TY - THES

T1 - Technology and device development for active/passive integration on InP_based membrane on Si (IMOS)

AU - Zhang,Rui

PY - 2013

Y1 - 2013

U2 - 10.6100/IR757861

DO - 10.6100/IR757861

M3 - Phd Thesis 1 (Research TU/e / Graduation TU/e)

SN - 978-90-386-3426-5

PB - Technische Universiteit Eindhoven

CY - Eindhoven

ER -

Zhang R. Technology and device development for active/passive integration on InP_based membrane on Si (IMOS). Eindhoven: Technische Universiteit Eindhoven, 2013. 187 p. Available from, DOI: 10.6100/IR757861