Abstract
In order to understand the range of reported work functions for similar tantalum-based metal gate electrodes, this study chose to study well-characterized tantalum nitrides, TaNx, of various compositions deposited by either physical vapor deposition (PVD) sputtering or thermal atomic layer deposition (ALD). The work function was extracted with high-frequency capacitance-voltage (CV) measurements using a thickness series of SiO 2 or HfO2 as dielectric. The impact of gate electrode thickness, type of gate dielectric and annealing conditions on the work function were examined. It was observed that irrespective of the deposition technique or dielectric, the work function of the TaNx materials increases with increasing nitrogen content from an n-type work function (∼4.1 eV) to slightly above mid-gap (∼4.8 eV). Other changes in the work function could also be correlated with the thermal history of the gate stack. Furthermore, no work function dependence for a thickness range of 1.5 to 10 nm was observed for the ALD TaNx.
Original language | English |
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Pages | 215-224 |
Number of pages | 10 |
Publication status | Published - 1 Dec 2005 |
Externally published | Yes |
Event | 207th Electrochemical Society Meeting (ECS 2005) - Quebec, Canada Duration: 16 May 2005 → 20 May 2005 Conference number: 2005 https://www.electrochem.org/207 |
Conference
Conference | 207th Electrochemical Society Meeting (ECS 2005) |
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Abbreviated title | ECS 2005 |
Country/Territory | Canada |
City | Quebec |
Period | 16/05/05 → 20/05/05 |
Internet address |