Tantalum-based gate electrode metals for advanced cmos devices

J. C. Hooker, R. J.P. Lander, F. N. Cubaynes, T. Schram, F. Roozeboom, J. Van Zijl, M. Maas, F. C. Van Den Heuvel, E. P. Naburgh, J. G.M. Van Berkum, Y. Tamminga, T. Dao, K. Henson, M. Schaekers, A. Van Ammel, Z. Tokei, M. Demand, C. Dachs

Research output: Contribution to conferencePaperAcademic

Abstract

In order to understand the range of reported work functions for similar tantalum-based metal gate electrodes, this study chose to study well-characterized tantalum nitrides, TaNx, of various compositions deposited by either physical vapor deposition (PVD) sputtering or thermal atomic layer deposition (ALD). The work function was extracted with high-frequency capacitance-voltage (CV) measurements using a thickness series of SiO 2 or HfO2 as dielectric. The impact of gate electrode thickness, type of gate dielectric and annealing conditions on the work function were examined. It was observed that irrespective of the deposition technique or dielectric, the work function of the TaNx materials increases with increasing nitrogen content from an n-type work function (∼4.1 eV) to slightly above mid-gap (∼4.8 eV). Other changes in the work function could also be correlated with the thermal history of the gate stack. Furthermore, no work function dependence for a thickness range of 1.5 to 10 nm was observed for the ALD TaNx.

Original languageEnglish
Pages215-224
Number of pages10
Publication statusPublished - 1 Dec 2005
Externally publishedYes
Event207th Electrochemical Society Meeting (ECS 2005) - Quebec, Canada
Duration: 16 May 200520 May 2005
Conference number: 2005
https://www.electrochem.org/207

Conference

Conference207th Electrochemical Society Meeting (ECS 2005)
Abbreviated titleECS 2005
Country/TerritoryCanada
CityQuebec
Period16/05/0520/05/05
Internet address

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