We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers|
|Publication status||Published - 1999|