Systematics of electrical conductivity across InP to GaAs wafer fused interfaces

M. Hammar; F. Wennekes; F. Salomonsson; J. Bentell; K. Streubel; S. Rapp; D. Keiper; R. Westphalen

doi:10.1143/JJAP.38.1111

Systematics of electrical conductivity across InP to GaAs wafer fused interfaces

M. Hammar, F. Wennekes, F. Salomonsson, J. Bentell, K. Streubel, S. Rapp, D. Keiper, R. Westphalen

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Abstract

We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron.

Original language	English
Pages (from-to)	1111-1114
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers
Volume	38
DOIs	https://doi.org/10.1143/JJAP.38.1111
Publication status	Published - 1999

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10.1143/JJAP.38.1111

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title = "Systematics of electrical conductivity across InP to GaAs wafer fused interfaces",

abstract = "We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron.",

author = "M. Hammar and F. Wennekes and F. Salomonsson and J. Bentell and K. Streubel and S. Rapp and D. Keiper and R. Westphalen",

year = "1999",

doi = "10.1143/JJAP.38.1111",

language = "English",

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TY - JOUR

T1 - Systematics of electrical conductivity across InP to GaAs wafer fused interfaces

AU - Hammar, M.

AU - Wennekes, F.

AU - Salomonsson, F.

AU - Bentell, J.

AU - Streubel, K.

AU - Rapp, S.

AU - Keiper, D.

AU - Westphalen, R.

PY - 1999

Y1 - 1999

N2 - We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron.

AB - We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron.

U2 - 10.1143/JJAP.38.1111

DO - 10.1143/JJAP.38.1111

M3 - Article

SN - 0021-4922

VL - 38

SP - 1111

EP - 1114

JO - Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers

JF - Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers

ER -

Systematics of electrical conductivity across InP to GaAs wafer fused interfaces

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