Abstract
This paper describes a systematic large-signal verification procedure for mm-wave SiGe bipolar transistors. The verification paradigm is composed out of three complementary procedures: modeling of the intrinsic device(s), collecting measured data at the tips of probes and de-embedding the test fixture from measured data. The procedure is demonstrated for single and multi-device structures at two distinct operating frequencies, namely 900MHz and 30GHz. The verification between the measured and simulated data, reveals an accuracy of 0.3dB and 7% for respectively output power level and efficiency. Based on this verification procedure, a realistic overview of device performance describes in terms of PAE as function of Po over various frequencies and device-sizes, is extracted.
| Original language | English |
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| Title of host publication | Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2012), September 30 - October 3, 2012, Portland, Oregon |
| Place of Publication | Piscataway |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 1-4 |
| ISBN (Print) | 978-1-4673-3020-6 |
| DOIs | |
| Publication status | Published - 2012 |