Systematic large-signal verification procedure for mm-wave SiGe bipolar transistors

J.A.J. Essing, D.M.W. Leenaerts, R. Mahmoudi

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This paper describes a systematic large-signal verification procedure for mm-wave SiGe bipolar transistors. The verification paradigm is composed out of three complementary procedures: modeling of the intrinsic device(s), collecting measured data at the tips of probes and de-embedding the test fixture from measured data. The procedure is demonstrated for single and multi-device structures at two distinct operating frequencies, namely 900MHz and 30GHz. The verification between the measured and simulated data, reveals an accuracy of 0.3dB and 7% for respectively output power level and efficiency. Based on this verification procedure, a realistic overview of device performance describes in terms of PAE as function of Po over various frequencies and device-sizes, is extracted.
Original languageEnglish
Title of host publicationProceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2012), September 30 - October 3, 2012, Portland, Oregon
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Print)978-1-4673-3020-6
Publication statusPublished - 2012


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