System-in-package integration of passives using 3D through-silicon vias

F. Roozeboom; W. Dekkers; Y. Lamy; J.H. Klootwijk; E.C.E. Grunsven, van; H.-D. Kim

System-in-package integration of passives using 3D through-silicon vias

F. Roozeboom, W. Dekkers, Y. Lamy, J.H. Klootwijk, E.C.E. Grunsven, van, H.-D. Kim

Plasma & Materials Processing

Research output: Contribution to journal › Article › Academic › peer-review

11 Citations (Scopus)

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Abstract

Future generations of cellular RF transceivers require higher degrees of integration, preferably using the third dimension. System-in-Package (SiP) applications have been shown for integrated 3D "trench" capacitors in silicon with a new world record capacitance density of =400nF/mm^sup 2^ and break-down voltage >6V using Atomic Layer Deposition (ALD) of multiple MIM layer stacks of high-k dielectrics (Al^sub 2^O^sub 3^) and conductive layers (TiN).

Original language	English
Pages (from-to)	38-41, 47
Number of pages	5
Journal	Solid State Technology
Volume	51
Issue number	May
Publication status	Published - 2008

Cite this

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title = "System-in-package integration of passives using 3D through-silicon vias",

abstract = "Future generations of cellular RF transceivers require higher degrees of integration, preferably using the third dimension. System-in-Package (SiP) applications have been shown for integrated 3D {"}trench{"} capacitors in silicon with a new world record capacitance density of =400nF/mm^sup 2^ and break-down voltage >6V using Atomic Layer Deposition (ALD) of multiple MIM layer stacks of high-k dielectrics (Al^sub 2^O^sub 3^) and conductive layers (TiN).",

author = "F. Roozeboom and W. Dekkers and Y. Lamy and J.H. Klootwijk and {Grunsven, van}, E.C.E. and H.-D. Kim",

year = "2008",

language = "English",

volume = "51",

pages = "38--41, 47",

journal = "Solid State Technology",

issn = "0038-111X",

publisher = "Pennwell Corporation",

number = "May",

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TY - JOUR

T1 - System-in-package integration of passives using 3D through-silicon vias

AU - Roozeboom, F.

AU - Dekkers, W.

AU - Lamy, Y.

AU - Klootwijk, J.H.

AU - Grunsven, van, E.C.E.

AU - Kim, H.-D.

PY - 2008

Y1 - 2008

N2 - Future generations of cellular RF transceivers require higher degrees of integration, preferably using the third dimension. System-in-Package (SiP) applications have been shown for integrated 3D "trench" capacitors in silicon with a new world record capacitance density of =400nF/mm^sup 2^ and break-down voltage >6V using Atomic Layer Deposition (ALD) of multiple MIM layer stacks of high-k dielectrics (Al^sub 2^O^sub 3^) and conductive layers (TiN).

AB - Future generations of cellular RF transceivers require higher degrees of integration, preferably using the third dimension. System-in-Package (SiP) applications have been shown for integrated 3D "trench" capacitors in silicon with a new world record capacitance density of =400nF/mm^sup 2^ and break-down voltage >6V using Atomic Layer Deposition (ALD) of multiple MIM layer stacks of high-k dielectrics (Al^sub 2^O^sub 3^) and conductive layers (TiN).

M3 - Article

SN - 0038-111X

VL - 51

SP - 38-41, 47

JO - Solid State Technology

JF - Solid State Technology

IS - May

ER -

System-in-package integration of passives using 3D through-silicon vias

Abstract

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