Synthesis and properties of n-type doped semiconducting materials

K.H. Chmill, D.M. Leeuw, de, M.M.J. Simenon, A.J.W. Tol

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)


The availibility of stable n-type doped semiconducting polymers would allow the fabrication of p(i)n-diodes and light-emitting p(i)n-diodes. But until now no n-type doped conducting polymers, having similar stability to p-doped polymers, such as polypyrrole or polyaniline, are known. For applications in bipolar polymeric microelectronic devices we aim for n-type doped polymers with an electrode potential of about -0.5 V (SCE). Electronegative hetero aromatic oligomers, viz. oligo-oxa(thia)diazoles, are presently synthesized for this purpose to demonstrate the correlation between conjugation length and observed redox potential.
Original languageEnglish
Pages (from-to)387-388
JournalSynthetic Metals
Issue number1-3
Publication statusPublished - 1997


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