Synthesis and properties of n-type doped semiconducting materials

K.H. Chmill; D.M. Leeuw, de; M.M.J. Simenon; A.J.W. Tol

doi:10.1016/S0379-6779(97)80795-3

Synthesis and properties of n-type doped semiconducting materials

K.H. Chmill, D.M. Leeuw, de, M.M.J. Simenon, A.J.W. Tol

Mechanical Engineering

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Abstract

The availibility of stable n-type doped semiconducting polymers would allow the fabrication of p(i)n-diodes and light-emitting p(i)n-diodes. But until now no n-type doped conducting polymers, having similar stability to p-doped polymers, such as polypyrrole or polyaniline, are known. For applications in bipolar polymeric microelectronic devices we aim for n-type doped polymers with an electrode potential of about -0.5 V (SCE). Electronegative hetero aromatic oligomers, viz. oligo-oxa(thia)diazoles, are presently synthesized for this purpose to demonstrate the correlation between conjugation length and observed redox potential.

Original language	English
Pages (from-to)	387-388
Journal	Synthetic Metals
Volume	84
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(97)80795-3
Publication status	Published - 1997

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title = "Synthesis and properties of n-type doped semiconducting materials",

abstract = "The availibility of stable n-type doped semiconducting polymers would allow the fabrication of p(i)n-diodes and light-emitting p(i)n-diodes. But until now no n-type doped conducting polymers, having similar stability to p-doped polymers, such as polypyrrole or polyaniline, are known. For applications in bipolar polymeric microelectronic devices we aim for n-type doped polymers with an electrode potential of about -0.5 V (SCE). Electronegative hetero aromatic oligomers, viz. oligo-oxa(thia)diazoles, are presently synthesized for this purpose to demonstrate the correlation between conjugation length and observed redox potential.",

author = "K.H. Chmill and {Leeuw, de}, D.M. and M.M.J. Simenon and A.J.W. Tol",

year = "1997",

doi = "10.1016/S0379-6779(97)80795-3",

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T1 - Synthesis and properties of n-type doped semiconducting materials

AU - Chmill, K.H.

AU - Leeuw, de, D.M.

AU - Simenon, M.M.J.

AU - Tol, A.J.W.

PY - 1997

Y1 - 1997

N2 - The availibility of stable n-type doped semiconducting polymers would allow the fabrication of p(i)n-diodes and light-emitting p(i)n-diodes. But until now no n-type doped conducting polymers, having similar stability to p-doped polymers, such as polypyrrole or polyaniline, are known. For applications in bipolar polymeric microelectronic devices we aim for n-type doped polymers with an electrode potential of about -0.5 V (SCE). Electronegative hetero aromatic oligomers, viz. oligo-oxa(thia)diazoles, are presently synthesized for this purpose to demonstrate the correlation between conjugation length and observed redox potential.

AB - The availibility of stable n-type doped semiconducting polymers would allow the fabrication of p(i)n-diodes and light-emitting p(i)n-diodes. But until now no n-type doped conducting polymers, having similar stability to p-doped polymers, such as polypyrrole or polyaniline, are known. For applications in bipolar polymeric microelectronic devices we aim for n-type doped polymers with an electrode potential of about -0.5 V (SCE). Electronegative hetero aromatic oligomers, viz. oligo-oxa(thia)diazoles, are presently synthesized for this purpose to demonstrate the correlation between conjugation length and observed redox potential.

U2 - 10.1016/S0379-6779(97)80795-3

DO - 10.1016/S0379-6779(97)80795-3

M3 - Article

SN - 0379-6779

VL - 84

SP - 387

EP - 388

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

ER -

Synthesis and properties of n-type doped semiconducting materials

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