Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor

P.R.F. Rocha, H.L. Gomes, A. Kiazadeh, Qian Chen, D.M. Leeuw, de, S.C.J. Meskers

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit. It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of time. The time to switch is longer the lower is the applied voltage and follows an exponential behavior. This suggests that for a switching event to occur a certain amount of charge is required.
Original languageEnglish
Title of host publicationNew Functional Materials and Emerging Device Architectures for Nonvolatile Memories
Place of PublicationPittsburgh
PublisherMaterials Research Society
Number of pages6
Publication statusPublished - 2011

Publication series

NameMaterials Research Society symposium proceedings
ISSN (Print)0272-9172


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