This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit. It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of time. The time to switch is longer the lower is the applied voltage and follows an exponential behavior. This suggests that for a switching event to occur a certain amount of charge is required.
|Title of host publication||New Functional Materials and Emerging Device Architectures for Nonvolatile Memories|
|Place of Publication||Pittsburgh|
|Publisher||Materials Research Society|
|Number of pages||6|
|Publication status||Published - 2011|
|Name||Materials Research Society symposium proceedings|
Rocha, P. R. F., Gomes, H. L., Kiazadeh, A., Chen, Q., Leeuw, de, D. M., & Meskers, S. C. J. (2011). Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor. In New Functional Materials and Emerging Device Architectures for Nonvolatile Memories (pp. 1-6). [mrss11-1337-q10-06] (Materials Research Society symposium proceedings; Vol. 1337). Materials Research Society. https://doi.org/10.1557/opl.2011.859