Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor

P.R.F. Rocha, H.L. Gomes, A. Kiazadeh, Qian Chen, D.M. Leeuw, de, S.C.J. Meskers

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit. It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of time. The time to switch is longer the lower is the applied voltage and follows an exponential behavior. This suggests that for a switching event to occur a certain amount of charge is required.
Original languageEnglish
Title of host publicationNew Functional Materials and Emerging Device Architectures for Nonvolatile Memories
Place of PublicationPittsburgh
PublisherMaterials Research Society
Pages1-6
Number of pages6
DOIs
Publication statusPublished - 2011

Publication series

NameMaterials Research Society symposium proceedings
Volume1337
ISSN (Print)0272-9172

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    Rocha, P. R. F., Gomes, H. L., Kiazadeh, A., Chen, Q., Leeuw, de, D. M., & Meskers, S. C. J. (2011). Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor. In New Functional Materials and Emerging Device Architectures for Nonvolatile Memories (pp. 1-6). [mrss11-1337-q10-06] (Materials Research Society symposium proceedings; Vol. 1337). Materials Research Society. https://doi.org/10.1557/opl.2011.859