Switching dynamics in non-volatile polymer memories

F. Verbakel; S.C.J. Meskers; R.A.J. Janssen; H.L. Gomes; A.J.M. Biggelaar, van den; D.M. Leeuw, de

doi:10.1016/j.orgel.2008.05.022

Switching dynamics in non-volatile polymer memories

F. Verbakel, S.C.J. Meskers, R.A.J. Janssen, H.L. Gomes, A.J.M. Biggelaar, van den, D.M. Leeuw, de

Research output: Contribution to journal › Article › Academic › peer-review

12 Citations (Scopus)

Abstract

The time dependence of resistive switching in metal-metal oxide-organic semiconductor-metal diodes is investigated. The switching dynamics is controlled by two intrinsic time dependences. A single switching event occurs in a time scale of 400 nanoseconds, but the maximum repetitive switching between ON- and OFF-states is limited by a "dead time" of a few milliseconds. The dead time is the waiting time after programming in which a next switch is inhibited. Therefore, fast repetitive pulsing prevents the observation of non-volatile switching and limits the maximum clock rate at which these memories can be used. Understanding the origin of this dead time is crucial to future memory applications. Furthermore, the occurrence of a dead time is possibly the origin of the huge variation in the reported switching times.

Original language	English
Pages (from-to)	829-833
Number of pages	5
Journal	Organic Electronics
Volume	9
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2008.05.022
Publication status	Published - 2008

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title = "Switching dynamics in non-volatile polymer memories",

abstract = "The time dependence of resistive switching in metal-metal oxide-organic semiconductor-metal diodes is investigated. The switching dynamics is controlled by two intrinsic time dependences. A single switching event occurs in a time scale of 400 nanoseconds, but the maximum repetitive switching between ON- and OFF-states is limited by a {"}dead time{"} of a few milliseconds. The dead time is the waiting time after programming in which a next switch is inhibited. Therefore, fast repetitive pulsing prevents the observation of non-volatile switching and limits the maximum clock rate at which these memories can be used. Understanding the origin of this dead time is crucial to future memory applications. Furthermore, the occurrence of a dead time is possibly the origin of the huge variation in the reported switching times.",

author = "F. Verbakel and S.C.J. Meskers and R.A.J. Janssen and H.L. Gomes and {Biggelaar, van den}, A.J.M. and {Leeuw, de}, D.M.",

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T1 - Switching dynamics in non-volatile polymer memories

AU - Verbakel, F.

AU - Meskers, S.C.J.

AU - Janssen, R.A.J.

AU - Gomes, H.L.

AU - Biggelaar, van den, A.J.M.

AU - Leeuw, de, D.M.

PY - 2008

Y1 - 2008

N2 - The time dependence of resistive switching in metal-metal oxide-organic semiconductor-metal diodes is investigated. The switching dynamics is controlled by two intrinsic time dependences. A single switching event occurs in a time scale of 400 nanoseconds, but the maximum repetitive switching between ON- and OFF-states is limited by a "dead time" of a few milliseconds. The dead time is the waiting time after programming in which a next switch is inhibited. Therefore, fast repetitive pulsing prevents the observation of non-volatile switching and limits the maximum clock rate at which these memories can be used. Understanding the origin of this dead time is crucial to future memory applications. Furthermore, the occurrence of a dead time is possibly the origin of the huge variation in the reported switching times.

AB - The time dependence of resistive switching in metal-metal oxide-organic semiconductor-metal diodes is investigated. The switching dynamics is controlled by two intrinsic time dependences. A single switching event occurs in a time scale of 400 nanoseconds, but the maximum repetitive switching between ON- and OFF-states is limited by a "dead time" of a few milliseconds. The dead time is the waiting time after programming in which a next switch is inhibited. Therefore, fast repetitive pulsing prevents the observation of non-volatile switching and limits the maximum clock rate at which these memories can be used. Understanding the origin of this dead time is crucial to future memory applications. Furthermore, the occurrence of a dead time is possibly the origin of the huge variation in the reported switching times.

U2 - 10.1016/j.orgel.2008.05.022

DO - 10.1016/j.orgel.2008.05.022

M3 - Article

SN - 1566-1199

VL - 9

SP - 829

EP - 833

JO - Organic Electronics

JF - Organic Electronics

IS - 5

ER -

Switching dynamics in non-volatile polymer memories

Abstract

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