Switching CdSe quantum dot luminescence with a-Si:H

M. Vece, Di; S.N.F. Duren, van; D.J. Heuvel, van; D. Mitoraj; Y. Kuang; H.C. Gerritsen; R.E.I. Schropp

doi:10.1088/0957-4484/24/31/315202

Switching CdSe quantum dot luminescence with a-Si:H

M. Vece, Di, S.N.F. Duren, van, D.J. Heuvel, van, D. Mitoraj, Y. Kuang, H.C. Gerritsen, R.E.I. Schropp

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si:H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si:H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.

Original language	English
Pages (from-to)	315202-1/4
Number of pages	4
Journal	Nanotechnology
Volume	24
DOIs	https://doi.org/10.1088/0957-4484/24/31/315202
Publication status	Published - 2013
Externally published	Yes

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title = "Switching CdSe quantum dot luminescence with a-Si:H",

abstract = "Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si:H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si:H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.",

author = "{Vece, Di}, M. and {Duren, van}, S.N.F. and {Heuvel, van}, D.J. and D. Mitoraj and Y. Kuang and H.C. Gerritsen and R.E.I. Schropp",

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doi = "10.1088/0957-4484/24/31/315202",

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AU - Vece, Di, M.

AU - Duren, van, S.N.F.

AU - Heuvel, van, D.J.

AU - Mitoraj, D.

AU - Kuang, Y.

AU - Gerritsen, H.C.

AU - Schropp, R.E.I.

PY - 2013

Y1 - 2013

N2 - Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si:H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si:H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.

AB - Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si:H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si:H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.

U2 - 10.1088/0957-4484/24/31/315202

DO - 10.1088/0957-4484/24/31/315202

M3 - Article

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SN - 0957-4484

VL - 24

SP - 315202-1/4

JO - Nanotechnology

JF - Nanotechnology

ER -

Switching CdSe quantum dot luminescence with a-Si:H

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