Switching CdSe quantum dot luminescence with a-Si:H

M. Vece, Di, S.N.F. Duren, van, D.J. Heuvel, van, D. Mitoraj, Y. Kuang, H.C. Gerritsen, R.E.I. Schropp

Research output: Contribution to journalArticleAcademicpeer-review


Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si:H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si:H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.
Original languageEnglish
Pages (from-to)315202-1/4
Number of pages4
Publication statusPublished - 2013
Externally publishedYes


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