Abstract
We calculate the surface dipolar recombination rate Ls for spin-polarized hydrogen adsorbed on He4 surfaces at temperatures in the 0.2- to 0.6-K regime and for magnetic fields up to 30 T. For a magnetic field of 7.6 T normal to the surface and 0.4 K we find Ls=1.3(3)×10-25 cm4 s-1 increasing by 10%/T in the range of experimental interest. The anisotropy with the direction of the magnetic field is considerably smaller than in the case of the surface dipolar relaxation.
Original language | English |
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Pages (from-to) | 1919-1922 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 53 |
Issue number | 20 |
DOIs | |
Publication status | Published - 1 Jan 1984 |